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Evidence of domain wall contribution to the dielectric permittivity in PZT thin films at sub-switching fields

Publications associées (107)

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Internal electric fields and electrode effects in ferroelectric thin films for piezoelectric energy harvesting

Robin Nigon

The continuing decrease of power requirements of electronic circuits offers the potential to deploy wireless systems as embedded sensors for cars or industrial tools, and implanted medical devices. Harvesting ambient vibrations by an appropriate energy har ...

EPFL2017

Domain walls and defects in ferroelectric materials

Dragan Damjanovic

The results of recent studies of domain walls and their interaction with defects in BaTiO3, Pb(Zr, Ti)O-3, and BiFeO3 are discussed. The studies reveal why donor- and acceptor-doped Pb(Zr, Ti)O-3 behave differently, what is the role of stationary charged d ...

Japan Society of Applied Physics2017

Soft-Sphere Continuum Solvation in Electronic-Structure Calculations

Nicola Marzari, Oliviero Andreussi

We present an implicit solvation approach where the interface-between the quantum-mechanical solute and the surrounding environment is, described by a fully continuous permittivity built up with atomic-centered "soft" spheres. This approach combines many o ...

Amer Chemical Soc2017

The motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain-wall motion through the ferroelectric material is, however, hindered by pinning on crystal defects, ...

Amer Physical Soc2016

Novel electroresponsive silicone elastomers modified with nitrile groups are presented, whose dielectric permittivity (epsilon') is tuned from epsilon' = 4.3 to epsilon' = 17.4. They are prepared in a one-step process starting from a high molecular weight ...

Royal Soc Chemistry2016

Velocity Control of 180 degrees Domain Walls in Ferroelectric Thin Films by Electrode Modification

Nava Setter, Alexander Tagantsev, Tomas Sluka, Petr Yudin, Ludwig Feigl

The velocity of individual 1800 domain walls in thin ferroelectric films of PbZr0.1Ti0.9O3 is strongly dependent on the thickness of the top Pt electrode made by electron-beam induced deposition (EBID). We show that when the thickness is varied in the rang ...

Amer Chemical Soc2016

Thin-film-specific elastic effects in ferroelectric domain structures

Konstantin Shapovalov

An essential feature of ferroelectric thin films is the presence in them of domain structures. In order to efficiently implement ferroelectric films into potential new ferroelectrics-based devices, it is of high interest to understand the behaviour of doma ...

EPFL2016

Role of charged defects on the electrical and electromechanical properties of rhombohedral Pb(Zr,Ti)O3 with oxygen octahedra tilts

Dragan Damjanovic

Oxygen octahedra tilting is a common structural phenomenon in perovskites and has been subject of intensive studies, particularly in rhombohedral Pb(Zr,Ti)O3 (PZT). Early reports suggest that the tilted octahedra may strongly affect the domain switching be ...

Amer Physical Soc2016

In-situ structural investigations of ferroelasticity in soft and hard rhombohedral and tetragonal PZT

Dragan Damjanovic

Despite the technological importance of hard and soft PZT, Pb(Zr,Ti)O3, ceramics, the mechanisms of ferroelectric hardening and softening remain widely discussed in the literature. The hardening and softening phenomena have traditionally been investigated ...

American Institute of Physics2015

Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films

Nava Setter, Ludwig Feigl

Ferroelectric switching in circular and ring capacitors has been performed using a stroboscopic mode of piezoresponse force microscopy. A simple geometric model incorporating the characteristic domain wall motion is sufficient to describe the switching of ...

Taylor & Francis2015