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Two W protection schemes for direct-contact bottom electrodes for PZT thin films, namely RuO2/Cr and RuO2/Ru, were compared with respect to protective performance and contact resistance up to 800 degrees C annealing temperature in oxygen. Cr clearly offers better protection for W than Ru-based schemes by forming a passivating Cr2O3 layer. No Cr is detected on the RuO2 surface, even after annealing at 800 degrees C, due to its entrapment by RuO2 by oxidoreduction. However, the formation of a continuous Cr2O3 film at the RuO2/Cr interface gives rise to an increased contact resistance above 650 degrees C. RuO2/Ru does not show any measurable contact resistance on W, but fails above 600 degrees C.
Paul Muralt, Ramin Matloub Aghdam, Robin Nigon, Silviu Cosmin Sandu, Andrea Mazzalai, Nachiappan Chidambaram, Davide Balma
Paul Muralt, Ramin Matloub Aghdam, Andrea Mazzalai, Nachiappan Chidambaram, Davide Balma