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Domain wall pinning contribution to the nonlinear dielectric permittivity in Pb(Zr, Ti)O-3 thin films

Publications associées (39)

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We develop a theory for investigating atomic-scale dielectric permittivity profiles across interfaces between insulators. A local susceptibility chi(x;omega) is introduced to describe variations of the dielectric response over length scales of the order of ...

2005

The nonlinearity and subswitching hysteresis in hard and soft PZT

Nava Setter, Dragan Damjanovic

Nonlinear dielectric response of soft and hard PZT is experimentally studied at subswitching conditions. The correlations between defect disordering and parameters of nonlinear dielectric response and hysteresis are demonstrated and discussed. (c) 2005 Els ...

2005

Infrared properties of the Si-SiO2 interface from first principles

Feliciano Giustino

We study the infrared properties of the Si-SiO2 interface within a first-principles approach. In order to provide an atomic-scale description of the dielectric permittivity (both high-frequency and static) and of the infrared absorption at the interface, w ...

EPFL2005

Analysis of the non linear domain wall response in ferroelectric thin films

Nava Setter, Dragan Damjanovic

In ferroelectric materials, domain wall displacement plays a key role in the dielectric properties measured with respect to the driving field amplitude and frequency. The low to medium field dielectric response in many ferroic systems can be often describe ...

2004

Dielectric susceptibility of dipolar molecular liquids by ab initio molecular dynamics: application to liquid HCl

Alfredo Pasquarello

We study the dielectric susceptibility of liquid hydrogen chloride at a temperature of 313 K using ab initio molecular dynamics evolving, in a homogeneous electric field. For an evolution in absence of electric field, the calculated neutron structure facto ...

2004

Polarization response of Perovskite films for microwave tunable applications

Konstantin Astafiev

Ferroelectric thin films are widely studied nowadays as potential replacements for semiconductors in modern tunable microwave devices such as tunable filters, phase-shifters, frequency mixers, power dividers, etc. Recent progress in the deposition of compl ...

EPFL2004

Can the addition of a dielectric improve the figure of merit of a tunable material?

Nava Setter, Alexander Tagantsev, Konstantin Astafiev

The influence of addition of a low-loss linear dielectric material to a tunable ferroelectric material has been investigated in terms of the electrostatic consideration. The calculations of the dielectric loss and dielectric non-linearity of ferroelectric- ...

2003

Films minces relaxeur-ferroélectriques à base de Pb(Mg1/3NB2/3)O3

Zian Kighelman

Relaxor Pb(Mg1/3Nb2/3)O3(PMN) and its solid solutions with ferroelectric PbTiO3 (PT) are of considerable interest from both the applications and the scientific point of view. In the past, many attempts were made to prepare and study the properties of these ...

EPFL2002

Using the variational density-functional perturbation theory, we investigate the dynamical and dielectric properties of tetragonal zirconia (t-ZrO2). We obtain the phonon frequencies at the center of the Brillouin zone, the Born effective charge tensors, a ...

2001

A phenomenological model was proposed which describes frequency dispersion of nonlinear dielectric response of relaxer ferroelectrics (relaxors) as a result of dispersion of their linens dielectric permittivity. The model was applied to Pb(Mg1/3Nb2/3)O-3 ( ...

2000