Aluminum nitride thin films for high frequency applications
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Fabrication of high-density ferroelectric memories requires the growth of the ferroelectric material on the drain contact metal. In standard 0.5 mum technology, tungsten plugs are applied to connect the drain contacts to the first metallization level. In t ...
A high kinetics rate electrochemical cell in which at least one of the electrodes is composed of a mesostructural electroactive material is comprising a three-dimensional framework structure of mesoporous texture forming a bicontinuous junction of large sp ...
PLZT 4/65/35 thin films were prepared by the acetic acid based sol-gel route. The choice of lanthanum precursor, i.e., acetate or nitrate, influences the functional group content of formamide modified sols and the microstructure of the thin films. The lant ...
Polycrystalline aluminum nitride thin films were deposited onto platinum, aluminum, and titanium electrodes by reactive magnetron sputtering in the pulsed direct current mode. The films exhibited all a columnar microstructure and a c-axis texture. The buil ...
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The frequency dependence (13.56-70 MHz) of the ion energy distribution at the ground electrode was measured by mass spectrometry in a symmetrical capacitive impedance at very high frequency allows high levels of plasma power and substrate ion flux while ma ...
Electrochromic devices (e.g., displays) comprising a first electrode, a second electrode, and an electrolyte sepg. the electrodes in which ≥1 one of the electrodes includes an elec. active structure which has an at least dual state visual appearance depend ...
The invention provides a device for obtaining an improved efficiency in a photovoltaic, nanostructured, dye sensitized cell structure, comprising a photoactive working electrode, a counter electrode and an electrolyte arranged there-between. The cell struc ...
PZT thin films for memory applications are known to lack sufficient resistance versus polarization fatigue when used together with platinum. One possible solution for this problem is to use conductive oxides like La1-xSrxCoO3 (LSCO) as an electrode. In thi ...