Charge relaxation at the interfaces of low-voltage ferroelectric film capacitors: Fatigue endurance and size effects
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A phenomenological approach is proposed describing both nonlinearity and frequency dispersion in dielectric and piezoelectric properties of lead zirconate titanate, Pb(Zr,Ti)O-3 (PZT), thin films and ceramics. The approach couples the frequency dependent r ...
We investigated he effect of film orientation on piezoelectric and ferroelectric properties of (Bi(3.25)Ln(0.75))Ti3O12 (Ln=La, Nd, and Sm). c-axis-oriented films were grown on (111)Pt electrodes with nondoped Bi4Ti3O12 buffer layers. The films grown on (1 ...
Pb(Zr,Ti)O-3 (PZT) and Pb(Zr,Ti,Nb)O-3 (PNZT) thin films were grown on platinized silicon substrates by r.f. magnetron sputtering followed by a post-annealing treatment. The Niobium, Nb, concentration varied from 1 to 7 at.% by increment of 1 at.%. The eff ...
The printing of lead zirconate titanate (PZT, Pb(Zr,Ti)O-3) piezoelectric thick films on silicon substrates is being studied for potential use as microactuators, microsensors, and micro.. transducers. A fundamental challenge in the fabrication of useful PZ ...
We report a first-principles investigation of ultrathin BaTiO3 films with SrRuO3 electrodes. We find that the ionic relaxations in the metal-oxide electrode play a crucial role in stabilizing the ferroelectric phase. Comparison with frozen-phonon calculati ...
The phenomenon of time-dependent polarization loss in poled ferroelectric capacitors, also known as retention, represents one of the most important reliability issues for ferroelectric nonvolatile memories. In a number of publications different ways to con ...
The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
Sol-gel process has successfully been applied for the deposition of porous PbZrxTi1-xO3 (x = 0.45, 0.15) thin films on platinized silicon wafers. Addition of a polymer as a volatile phase to the precursor sol prior to spin coating has been proved an excell ...
Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T-c) is traditionally accomplished by chemical substitution - as in BaxSr1-xTiO3, the ma ...
Understanding of polarization reversal mechanisms in ferroelectric films is essential for evaluation and prediction of the properties of ferroelectric devices including nonvolatile memories. The widely accepted approach based on the domain wall motion kine ...