Constant-current study of dielectric breakdown of Pb(Zr,Ti)O-3 ferroelectric film capacitors
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Thin films of neodymium-modified bismuth titanate Bi3.44Nd0.56Ti3O12 (BNT) were grown on Pt/TiO2/SiO2/Si substrates using chemical solution deposition method. The capacitors made by applying top Au electrodes on BNT films showed significantly improved valu ...
A theoretical study on the effect of spontaneous polarization screening on the dielectric response of ferroelectric films with 180 degrees domains going through the film thickness (through-domains) is presented. It has been shown by several researchers tha ...
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The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
Relaxor ferroelectric thin films exhibit a drastic reduction in the dielectric constant and associated properties in the thin film form, even for thicknesses in the micron range, which are essentially infinity for the size effects typically investigated in ...
Electrode effects are known for more than 150 years. These effects, with undesirable consequences in industrial aluminium electrolysis, can be used to micro-machine glass with Spark Assisted Chemical Engraving (SACE). In this paper, a novel approach for th ...
A ferroelectric film capacitor structure (FeCAP), in particular for memory applications, comprises a layer of doped ferroelectric material between facing electrodes having a varying/asymmetric doping profile, the concentration of the dopant in the ferroele ...
The influence of film thickness on the material properties of aluminum nitride (AlN) thin films deposited on Pt(111) electrodes has been investigated experimentally by means of x-ray diffraction, dielectric response, atomic force microscopy, interferometry ...