Publication

Direct observation of inversely polarized frozen nanodomains in fatigued ferroelectric memory capacitors

Publications associées (32)

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Domain Imaging and Switching Dynamics in BaTiO3-Based Photonic Integrated Devices

Jacqueline Geler Kremer

Keeping up with our constantly connected lifestyle of instant messages and video streaming has its repercussions. Data centers have been gobbling up resources becoming a significant share of the energy used worldwide. To keep up with demand and curb the en ...

EPFL2023

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

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We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

Mihai Adrian Ionescu, Igor Stolichnov, Matteo Cavalieri, Carlotta Gastaldi

HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...

AMER INST PHYSICS2020

Ferroelectric Self-Poling in GeTe Films and Crystals

Jan Hugo Dil

Ferroelectric materials are used in actuators or sensors because of their non-volatile macroscopic electric polarization. GeTe is the simplest known diatomic ferroelectric endowed with exceedingly complex physics related to its crystalline, amorphous, ther ...

2019

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The accurate evaluation of ferroelectric thin films operated with interdigitated electrodes is quite a complex task. In this article, we show how to correct the electric field and the capacitance in order to obtain identical polarization and CV loops for a ...

Amer Inst Physics2017

The dynamic dielectric nonlinearity of barium strontium titanate (Ba1-x, Sr-x) TiO3 ceramics is investigated in their paraelectric phase. With the goal to contribute to the identification of the mechanisms that govern the dielectric nonlinearity in this fa ...

American Institute of Physics2017

Strain-induced polar discontinuities in two-dimensional materials from combined first-principles and Schrodinger-Poisson simulations

Giovanni Pizzi, Marco Gibertini, Augustin Bussy

The local application of mechanical stress in piezoelectric materials gives rise to boundaries across which the electric polarization changes. Polarization charges appear along such polar discontinuities and the ensuing electric fields drive a charge recon ...

Amer Physical Soc2017

Ferroelectrics are materials with a spontaneous electrical polarization, which can be switched by an applied electric field between two or more stable orientations permitted by symmetry. The regions where the ferroelectric material is polarized in one dire ...

EPFL2013

Macroscopic Theory of Charged Domain Walls in Ferroelectrics

Maxim Gureev

This thesis consists of a theoretical analysis of charged domain walls in ferroelectrics based on Landau theory and the theory of semiconductors. First, the internal structure of a 180-degree charged domain wall is considered. It is shown that different re ...

EPFL2012