Mixed titania-lead oxide seed layers for PZT growth on Pt(111): a study on nucleation, texture and properties
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The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
Relaxor Pb(Mg1/3Nb2/3)O3(PMN) and its solid solutions with ferroelectric PbTiO3 (PT) are of considerable interest from both the applications and the scientific point of view. In the past, many attempts were made to prepare and study the properties of these ...
We have studied deposition by in-situ reactive sputtering of ferroelectric Pb(ZrxTi1-x)O3 (PZT) thin films on Pt and RuO2 electrodes, using temperatures in the 490-620°C range. Nucleation on the electrode was found to be of prime importance for the formati ...
The lead magnesium niobate [Pb(Mg1/3Nb2/3)O-3 or PMN], and its solid solutions with lead titanate (PbTiO3 or PT), are of great interest because of their high electromechanical properties. At large PMN content, these materials exhibit relaxor characteristic ...
Pb(Zr-x, Ti1-x)O-3 (PZT) piezoelectric thin films are of major interest in MEMS technology for their ability to provide electro-mechanical coupling. In this work, the effective transverse piezoelectric coefficient e(31,f) of sol-gel processed films was inv ...
In situ reactively sputter deposited, 300-nm-thick Pb(Zrx,Ti1-x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2). X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements ...
Pb(Zr,Ti)03 thin films with compositions close to the morphotropic phase boundary deposited onto electroded Si substrates have potential for use in ferroelectric memories, sensors and micromechanical devices. The microstructures of such films prepared by i ...
For micromechanical applications, piezoelectric PbZrTO3 (PZT) thin films have been deposited on metallised Si3N4/SiO2 layers on Si wafers. Films with compositions near the morphotropic phase boundary (x=0.53) were prepared at 600°C using a multitarget, in- ...
Sol-gel process has successfully been applied for the deposition of porous PbZrxTi1-xO3 (x = 0.45, 0.15) thin films on platinized silicon wafers. Addition of a polymer as a volatile phase to the precursor sol prior to spin coating has been proved an excell ...
Deposition of thin films via hydrothermal method has various advantages: low deposition temperature, high purity, deposition on a three-dimensional structure, and a large thickness. Although an epitaxial lead zirconate titanate (PZT) thin-film deposition h ...
