Ferroelectric and piezoelectric properties of lanthanoid-substituted Bi4Ti3O12 thin films grown on (111)Pt and (100)IrO2 electrodes
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Relaxor-ferroelectric single crystals PZN-xPT [(1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3] and PMN-xPT [(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3] continue to attract much interest due to their anomalously large piezoelectric properties (d33 > 2000 pm/V; k33 > 90%) when poled ("do ...
The continuous downscaling of microelectronic circuits combined with increasing interest in ferroelectric thin films for non-volatile random access memories (FeRAM) is drawing great attention to small ferroelectric thin film structures. There are various c ...
The electromechanical coupling in ferroelectric materials is controlled by several coexisting structural phenomena which can include piezoelectric lattice strain, 180 degrees and non-180 degrees domain wall motion, and interphase boundary motion. The struc ...
The role of long-range strain interactions on domain wall dynamics is explored through macroscopic and local measurements of nonlinear behavior in mechanically clamped and released polycrystalline lead zirconate-titanate (PZT) films. Released films show a ...
Interdigitated electrode (IDE) systems with lead zirconate titanate (PZT) thin films play an increasingly important role for two reasons: first, such a configuration generates higher voltages than parallel plate capacitor-type electrode (PPE) structures, a ...
Institute of Electrical and Electronics Engineers2012
The reasons for the lower piezoelectric properties in the most studied lead-free piezoelectrics, modified (K,Na)NbO3 and (Bi0.5Na0.5)TiO3, are discussed. Contributions from domain wall motion and properties at the morphotropic phase boundary are considered ...
In this paper the preparation and characterization of the ceramic material (K0.5Na0.5)NbO3 (KNN) has been studied. Although conventional processing of KNN is often reported to result in sintered bodies lacking sufficient density, samples produced in this w ...
The piezoelectric effect in ferroelectric single crystals and ceramics is investigated considering intrinsic (lattice), and extrinsic (originating mainly from displacement of domain walls) contributions. The focus of the study of intrinsic properties is on ...
Sol-gel process has successfully been applied for the deposition of porous PbZrxTi1-xO3 (x = 0.45, 0.15) thin films on platinized silicon wafers. Addition of a polymer as a volatile phase to the precursor sol prior to spin coating has been proved an excell ...
Thin film piezoelectric materials offer a number of advantages in microelectromechanical systems (MEMS), due to the large motions that can be generated, often with low hysteresis, the high available energy densities, as well as high sensitivity sensors wit ...
