Ferroelectric and piezoelectric properties of lanthanoid-substituted Bi4Ti3O12 thin films grown on (111)Pt and (100)IrO2 electrodes
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Pyroelectric thin film 12-element linear arrays (element size 0.4x0.9 mm(2)) have been fabricated by standard photolithography techniques on silicon substrates. A voltage responsivity of almost 800 V/W in air and 3000 V/W in vacuum is measured at low frequ ...
In the present study, piezoelectric, conductivity and dielectric measurements have been performed on virgin and fatigued ferroelectric PZT thin films prepared by spin-on sol-gel deposition process on Si/SiO2/Ti/Pt substrates. By fatiguing, the polarisation ...
The switching, fatigue and rejuvenation phenomena of ferroelectric PZT thin films with differently processed electrode-PZT interfaces and of different thicknesses have been investigated. The ferroelectric contribution to the switching parameters has been i ...
Degradation of piezoelectric properties has been studied in ferroelectric PZT films by means of optical interferometry. The degradation under de bias and aging of poled films have been observed. The decay of piezoelectric coefficient with time is described ...
Pyroelectric PbTiO3 thin films devices with two temperature compensating elements on a SiO2/Si3N4 membranes have been fabricated and characterized. The measured voltage responsivity as a function of radiation modulation frequency has been compared to finit ...