De l'effet de la polarisation électronique sur le transport de charge dans les semi-conducteurs moléculaires

This work aims at a better understanding of transport mechanisms which take place in organic semiconductors such as pentacene. More accurately, we believe that the electronic polarization plays a leading part, which we try to identify in the particular case of the acenes. These semiconductors are very polarisable molecules that can crystalise easily enough into ordered structures. Moreover, there is quite an important transfer integral between neighbouring molecules, which is very uncommon for such an organic. After some general remarks regarding quantum transport in chapter 1, we present the main features of this family of semiconductors (chapter 2). The question that arises then is : how the characteristic properties of the acenes can influence the ground state of the charge carrier in the cristal (chapter 3)? In order to build this ground state, we take into account the electronic polarisability and the coupling to the lattice, which dress the charge with a cloud of polarization and a cloud of phonons, and also the overlap and the thermal disorder. The time scales related to these different phenomenons play an essential part. By comparig them with the characteristic time of transfer between molecules, we classify those phenomenons into slow and fast effects. The fast ones characterize the effective mass of the charge carrier, whereas the slow ones determine the localization of the charge in a more or less disordered crystal. We will see that the slowest of these effects act in the same way as the static disorder and are able to induce electronic localization. Then comes a quantitative survey of the electronic polaron (chapter 4). We show that, on the one hand, electronic polaron leads to a renormalisation of the transfer integral whereas, on the other hand, it amplifies the low geometric disorder. We finally achieve a modelisation of the system by an Anderson hamiltonian, in which the energetic disorder –of which we study the statistic distribution– is the translation of the former geometric one. Before the quantitative study of the eigenstates of this hamiltonian, we take a glance at the different models already developped in order to understand the experimental data from organic semiconductors (chapter 5). There is one important feature which is rarely well taken into account : slow disorder. Yet, such a disorder can disturb the building of the Bloch states and thus lead to electronic localization that we study quantitatively (chapter 6). Finally, we gather both the fast and slow effects in a single picture : a model providing an expression of mobility according to the microscopic parameters (chapter 7). As a conclusion, we take a further step towards the devices. We leave the bulk out to consider a charge in the canal of a transistor, i. e. layers of pentacene on a dielectric medium, in order to take into account the interface effects (chapter 8).

Approches numériques du transport de charges dans les semiconducteurs organiques

Hocine Houili

Using plastics or dyes like molecular semiconductors to make optoelectronic devices at low cost is a project in industry that is of great interest to the "Information Community" of this beginning of the 21st century. Some applications of this technology have already been realized including flexible flat-panel displays made with organic light-emitting diodes, organic transistors for active matrices, organic solar cells and sensors. In all these applications it is essential to deduce and understand the laws that determine the charge transport and the light emission in these materials. The goal of this thesis is to contribute to the theoretical models that describe these transport processes. In order to predict the behaviour of charge carriers in a given device, one can choose two methods. One can either numerically solve the master equations that describe the general behaviour of charges and currents in each part of the device, or one can simulate the detailed behaviour of each charge in the device by fixing the conditions of its movement using a procedure known as "Monte Carlo". In this thesis I addressed the two approaches. I have been interested successively in the prediction of the electric properties of multilayer light-emitting devices, considered as a whole. Then I was able to understand in detail the processes accruing at the organic-organic interfaces by using the Monte Carlo method. My last project involved the study of the channel of an organic transistor. In each one of these cases I took account of the characteristic features of small molecule organic materials in order to develop models for charge transport for the study and optimization of two important types of organic devices : organic light-emitting diodes and field-effect transistors. Amorphous organic semiconductors are mainly used for the fabrication of organic diodes. They are characterized by an energetically disordered density of states that is assumed to be Gaussian. The transport of charges in these materials occurs via hopping from one molecule to another in this density of states. The correlations between the energies of the molecular sites have important effects on transport ; the dependence of mobility on the applied electric field in particular. If the energetic disorder is due to the random orientations of the permanent dipoles of the molecules, then the correlations between the orientations of these dipoles can profoundly change the spatial configuration of the energetic disorder and consequently the charge transport. Due to the fact that organic diodes often comprise of multiple organic layers, understanding device behaviour at the organic-organic interfaces is of critical importance. Electrons and holes accumulate close to these interfaces and they are therefore more likely to recombine and emit light. The Coulomb interactions between the charge carriers and the energy disorder are at the origin of complex processes taking place at these accumulation regions. I studied these processes through a 3D multi-particle Monte Carlo simulation. The short-range Coulomb repulsion forbids the double-occupancy of the sites and shifts the energy level for injection of carriers across the interface upward, thus increasing the electric current of the diode. The long-range Coulomb interactions increase the electric field and the current at the interface although this increase is less important than suggested by 1D models. Effects related to the hopping process such as the effect of the exact form of the hopping law and backward or return hop at the interface are clearly discussed. The Monte Carlo simulations are cross-compared with an analytical model for hopping transport across the interface. This comparison made it possible to understand other aspects of the physical processes at organic-organic interface and supports the Monte Carlo simulations. The study of the electron-hole recombination showed a decrease of the cross-section with an increase of the applied electric field, but this decrease is less than what can be expected by the classical Langevin theory. In spite of their efficiency, Monte Carlo simulations are not attractive when modelling complex multi-layer diodes. The 1D models are better suited in this case. A 1D model called MOLED, which was developed at Laboratoire d'Optoélectronique des Matériaux Moléculaires (LOMM) for the simulation of the organic diodes, is used and described in detail in this thesis. We used MOLED to explore the effect of the energy correlations on the electric field dependence of the mobility. In fact we simulated the time-of-flight experiment, a common method used to determine of the carrier mobility. The crystalline organic semiconductors achieve mobility performances close or even better than amorphous silicon. Their use for the fabrication of field-effect transistors is thus a good choice. The models for charge transport in crystalline organic materials differ much from their counterparts for amorphous organic materials. Indeed band models are more appropriate to describe charge transport in crystalline organic materials. However it is very important to take into account the effects of electronic polarization in these models. I developed a method of calculation of these effects of polarization in the bulk of the organic semiconductor and I extended it to the case of the interface with a dielectric insulator, a situation encountered in the channel of the organic transistor. These calculations showed that when the polarity of the dielectric increases the inter-molecular transfer integral decreases. This is confirmed by experimental measurements showing increasingly low values of mobility when the permittivity of the insulator increases.

EPFL2006

Scanning Tunneling Luminescence of Pentacene Nanocrystals

Alexander Kabakchiev

Organic semiconductors are promising materials for future electronic and electroluminescence applications. A detailed understanding of organic layers and nano-sized crystals down to single molecules can address fundamental questions of contacting organic semiconductors at the nanometer limit and obtaining luminescence from them. In this thesis, electroluminescence spectra from pentacene, a policyclic hydrocarbon (acene), are discussed. The luminescence is induced by the current from the tip of a scanning tunneling microscope (STM). Pentacene is an organic semiconductor which gained a lot of attention in technology because of its electronic properties suitable for applications in thin film devices. Moreover, recent fundamental studies employed pentacene as a standard to demonstrate sub-molecular resolution by scanning probe techniques. This work reports the first observation of light emission from nanometer-sized pentacene crystals grown on an ultrathin insulating layer on noble metal surfaces. Different STM-techniques are combined to characterize the individual systems studied with respect to topography, crystal structure, electronic properties and work function changes. The initial step of the project was the implementation of an optical system for light collection from the tunnel-junction of a low-temperature STM. In the set-up, a novel approach based on the use of in situ adjustable lenses has been realized. Three lenses placed in the vicinity of the tip-apex allow light collection into three independent channels which can be used for versatile optical analysis. An important part in the characterization of the organic system was to clarify the interaction between adsorbed molecules and substrates. We investigated individual pentacene molecules on different ultrathin insulator-metal systems. With the STM tip in tunnel contact, the molecules are situated in a double barrier junction formed by the insulating layer on one side and the vacuum gap on the other side. The metal surface and the STM-tip form the electrodes. The electronic properties of pentacene in this configuration have been characterized. Insulator-metal-systems, which provide a good electronic decoupling for pentacene from the metal, have been chosen as substrates for the growth of pentacene nanocrystals. Using the sub-molecular resolution of the STM we resolved the structure of the top-layer of the pentacene nanocrystals and found that the crystal phase agrees with the pentacene bulk structure. Moreover, the comparison of charge injection barriers between individual molecules and nanocrystals of pentacene indicates a significant change of electronic properties after the formation of ordered structure from the individual building blocks. Optical spectroscopy of the emitted light reveals an excitonic emission from the nanocrystals, which is in very good agreement with photoemission spectra of macroscopic crystals. Although a highly localized current-injection by the STM tip is used for excitation, it can be concluded that the source of light emission is delocalized. In contrast to luminescence measurements reported for other organic materials in STM, the excitation is not localized on the individual molecule, into which a charge is injected by the STM-tip. Our study indicates the importance of inter-molecular coupling leading to a high mobility of the excited state which has to be considered in the framework of STM-induced luminescence. A further result is the observation of the Stark shift of pentacene luminescence, that has so far not been measured at large electric fields of the order of 1V/nm. The evaluation of the Stark shift provides information on dipole and polarizability change during the decay of an exciton. The measured large dipole change of the lowest singlet exciton in pentacene indicates a mixing of the Frenkel exciton (FE) with a small contribution of charge-transfer (CT). Finally, we developed a set-up for photon correlation measurements in the STM. The properties of photon statistics is a means which can unambiguously prove that the luminescence is due to a single-photon source, i.e. a light source which emits no more than one photon at a time. A typical example of such a source is the emission from a single molecule. We performed photon correlations measurements of the luminescence from pentacene and C60 nanocrystals. While the excitonic bulk emission of pentacene is not expected to represent a single photon emitter, we also did not observe anticorrelations in the case of C60 indicating the importance of the local environment in the STM-junction, e.g. the short distance to the metal electrodes.

EPFL2010

Scanning Tunneling Luminescence of Pentacene Nanocrystals

Alexander Kabakchiev

EPFL2010

Approches numériques du transport de charges dans les semiconducteurs organiques

Hocine Houili

EPFL2006