Binding-Energies and Cluster Formation at Low Metal-Deposition - Ag on Si and Sio2

Giorgio Margaritondo
1992
Article

Résumé

A comparison of photoemission spectra from Ag clusters deposited on silicon oxide and on cleaved silicon substrate has allowed us to discriminate initial and final state effects in the binding energies of the valence band and of the 3d core level of the metal.

Source officielle

https://infoscience.epfl.ch/record/90125?ln=fr

À propos de ce résultat

Cette page est générée automatiquement et peut contenir des informations qui ne sont pas correctes, complètes, à jour ou pertinentes par rapport à votre recherche. Il en va de même pour toutes les autres pages de ce site. Veillez à vérifier les informations auprès des sources officielles de l'EPFL.

Binding-Energies and Cluster Formation at Low Metal-Deposition - Ag on Si and Sio2

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors

Insight into the electronic structure of semiconducting epsilon-GaSe and epsilon-InSe

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors

Insight into the electronic structure of semiconducting epsilon-GaSe and epsilon-InSe