Laterally-resolved study of the Au/SiNx/GaAs(100) interface
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The advent of scanning near-field optical microscopy (SNOM) has augmented at the microscopic level the usefulness of IR spectroscopy. Two-dimensional imaging of chemical constituents makes this a very attractive and powerful new approach. In this paper we ...
Scanning near-field optical microscopy (SNOM) makes it routinely possible to overcome the fundamental diffraction limit of standard (far-field) microscopy. Recently, aperture-based infrared SNOM performed in the spectroscopic mode,using the Vanderbilt Univ ...
The study of semiconductor interfaces and of solid interfaces in general requires novel instrument capable to investigate the lateral fluctuations of properties on a microscopic scale. We present the first result of a major effort in that framework, whose ...
Several approaches are described with the aim of producing near-field optical probes with improved properties. Focused ion beam milling allows the fabrication of small apertures in a controlled fashion, resulting in probes with excellent polarization prope ...
The advent of scanning near-field optical microscopy (SNOM) has augmented at a microscopic level the usefulness of optical spectroscopy in the region between 300 nm and 10 mum. Two-dimensional imaging of chemical constituents makes this a very attractive a ...
The infrared (IR) absorption of a biological system can potentially report on fundamentally important microchemical properties. For example, molecular IR profiles are known to change during increases in metabolic flux, protein phosphorylation, or proteolyt ...
The main purpose of this thesis is to explore a new concept of SNOM probes. In order to produce more reliable and reproducible tips, we propose to graft a single gold particle of 60 nm diameter onto the aperture of a SNOM probe. The expected advantage of s ...
We have studied the photoluminescence properties of GaN quantum dots with submicrometre lateral resolution by means of near-field scanning optical microscopy. The instrument operated at room temperature and was implemented for near-ultra-violet spectroscop ...
We have investigated the photoluminescence properties of GaN quantum dots with sub-micron lateral resolution by means of Near-Field Scanning Optical Microscopy (SNOM) operating in illumination mode. The analyzed sample consists of several stacked planes of ...
We observed chemical contrast with subwavelength resolution on a III-V heterostructure by a scanning near-field optical microscope (SNOM) working in the external reflection mode and coupled with a Free Electron Laser (FEL). SNOM reflectivity images reveale ...