Êtes-vous un étudiant de l'EPFL à la recherche d'un projet de semestre?
Travaillez avec nous sur des projets en science des données et en visualisation, et déployez votre projet sous forme d'application sur GraphSearch.
The electrical behavior of Au/SiOx/n-GaAs Schottky structures has been studied using a statistical approach. II has been concluded that the obtained unusual electrical behavior is connected mainly with different Fermi-level pinning position and lateral microinhomogeneities of the barrier height induced by different average thickness of the SiOx interlayer along the wafer. The results of cross-sectional transmission electron microscopy and the temperature dependence of the electrical characteristics confirm this conclusion. (C) 1998 Elsevier Science Ltd. All rights reserved.