Publication
Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts
Publications associées (30)
Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells
Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...
EPFL2024