Trans-Capacitance Modeling in Junctionless Symmetric Double Gate MOSFETs

We have developed a closed-form solution for trans-capacitances in long-channel Junctionless Double Gate MOSFET. This approach, which is derived from a coherent charge-based model, was fully validated with Technology Computer Aided Design simulations. According to this work, a complete intrinsic capacitance network is obtained, which represents an essential step towards AC analysis of circuits based on junctionless devices.

Trans-Capacitance Modeling in Junctionless Symmetric Double Gate MOSFETs

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Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Tool Developments in the OpenMC Code: Correlated Sampling and Transient Fission Matrix Approach Coupled to OpenFOAM

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Tool Developments in the OpenMC Code: Correlated Sampling and Transient Fission Matrix Approach Coupled to OpenFOAM