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X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

Publications associées (32)

Electromagnetic processes of nuclear excitation: from direct photoabsorption to free electron and muon capture

In the vast expanse of the Universe and on our planet, nuclei exist in a state of excitement. These excited nuclear states (isomers) can persist for varying periods, from fractions of a second to billions of years and beyond, before decaying to their groun ...

EPFL2023

High-Performance CMOS SPAD-Based Sensors for Time-of-Flight PET Applications

Francesco Gramuglia

Detecting light, photon by photon, has been possible since the 1930s, with the invention of the photomultiplier tube (PMT). However, it is only since the 1970s, that solid-state single-photon detectors have emerged and only since 2003 that a new technology ...

EPFL2022

High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices

Sylvain Dunand, Nicolas Würsch, Matthew James Large, Giulia Rossi

In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devic ...

MDPI2022

Characterization of the Radiation Resistance of Glass Fiber Reinforced Plastics for Superconducting Magnets

Sandra Sequeira Lopes Tavares

The overall performance of accelerator magnets strongly relies on electrical and mechanical robustness of their components. With an increase of the energy, future particle accelerators will have to withstand integral doses of ionizing radiation of up to se ...

IEEE Institute of Electrical and Electronics Engineers2022

Sub-10 ps Minimum Ionizing Particle Detection With Geiger-Mode APDs

Edoardo Charbon, Claudio Bruschini, Emanuele Ripiccini, Ming-Lo Wu, Francesco Gramuglia, Carlo Alberto Fenoglio

Major advances in silicon pixel detectors, with outstanding timing performance, have recently attracted significant attention in the community. In this work we present and discuss the use of state-of-the-art Geiger-mode APDs, also known as single-photon av ...

FRONTIERS MEDIA SA2022

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Camille Haller

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Search for relativistic fractionally charged particles in space

Jennifer Maria Frieden, Chiara Perrina, Jian Wang, Zhirui Xu, Yi Zhang, Siyuan Wang, Songmei Wu, Junqiu Liu, Johan Juul Chang, Jie Chen

More than a century after the performance of the oil drop experiment, the possible existence of fractionally charged particles (FCPs) still remains unsettled. The search for FCPs is crucial for some extensions of the Standard Model in particle physics. Mos ...

American Physical Society2022

Design, prototyping, and thermo-mechanical modelling of a neutron spallation target impacted by high-energy proton-beam pulses in the n_TOF facility at CERN

Raffaele Esposito

This manuscript describes the design work and the R&D activities carried out for the third-generation neutron production target in the neutron Time-Of-Flight (n_TOF) facility at the European Laboratory for Particle Physics (CERN). The facility is composed ...

EPFL2022

Beware of beam damage under reaction conditions: X-ray induced photochemical reduction of supported VOx catalysts during in situ XAS experiments

Oliver Kröcher, Davide Ferri, Anna Zabilska, Olga Safonova

In situ X-ray absorption spectroscopy (XAS) is a powerful technique for the investigation of heterogeneous catalysts and electrocatalysts. The obtained XAS spectra are usually interpreted from the point of view of the investigated chemical processes, there ...

ROYAL SOC CHEMISTRY2022

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Nicolas Grandjean, Jean-François Carlin, Camille Haller

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. ...

SPIE-INT SOC OPTICAL ENGINEERING2022