Publications associées à Surface emitting Terahertz Photonic Crystal Quantum Cascade Laser realized by Bragg boundary condition

Single-frequency violet and blue laser emission from AlGaInN photonic integrated circuit chips

Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated. The GaN-based edge-emitting laser diodes were coupled to high-quality on-chip micro-resonators for ...

Optica Publishing Group2023

Sub-kHz-Linewidth External-Cavity Laser (ECL) With Si3N4 Resonator Used as a Tunable Pump for a Kerr Frequency Comb

Tobias Kippenberg, Junqiu Liu

Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. Exter ...

IEEE Institute of Electrical and Electronics Engineers2023

Nonlinear Integrated Photonics for Ranging Applications

Anton Lukashchuk

This thesis explores the application of recent advances in integrated photonics to the field of light detection and ranging (LiDAR). The progress in photonic integration allows for unprecedented levels of light manipulation on micrometer scales through the ...

EPFL2023

Thiazole Boron Difluoride Dyes with Large Stokes Shift, Solid State Emission and Room-Temperature Phosphorescence

Jieping Zhu, Wei Wang, Shuo Tong

The small Stokes shift and weak emission in the solid state are two main shortcomings associated with the boron-dipyrromethene (BODIPY) family of dyes. This study presents the design, synthesis and luminescent properties of boron difluoro complexes of 2-ar ...

WILEY-V C H VERLAG GMBH2022

Electrically tunable optical resonator on a chip for fast tunable integrated lasers

Tobias Kippenberg, Anat Siddharth, Grigorii Likhachev

The present invention relates to an electrically tunable photonic resonator device for a component having a fast and flat actuation response, comprising: - At least one optical waveguide with an optical interface for coupling in laser light, - At least one ...

2022

Microwave plasma-assisted reactive HiPIMS of InN films: Plasma environment and material characterisation

Aïcha Hessler-Wyser, Johann Michler, Jonathan Emanuel Thomet, Caroline Hain, Thomas Nelis

This work focuses on the low temperature fabrication process of InN thin films via microwave plasma-assisted reactive high power impulse magnetron sputtering (MAR-HiPIMS). The influence of microwave plasma on the HiPIMS discharge process at various nitroge ...

ELSEVIER SCIENCE SA2022

Sensitivity and spectral control of network lasers

Alexis Arnaudon, Dinika Saxena

Recently, random lasing in complex networks has shown efficient lasing over more than 50 localised modes, promoted by multiple scattering over the underlying graph. If controlled, these network lasers can lead to fast-switching multifunctional light source ...

Nature Portfolio2022

Platicon microcomb generation using laser self-injection locking

Tobias Kippenberg, Rui Ning Wang, Junqiu Liu, Wenle Weng, Jijun He, Yang Liu, Miles Henry Anderson

The past decade has witnessed major advances in the development and system-level applications of photonic integrated microcombs, that are coherent, broadband optical frequency combs with repetition rates in the millimeter-wave to terahertz domain. Most of ...

Nature Portfolio2022

Dual chirped microcomb based parallel ranging at megapixel-line rates

Tobias Kippenberg, Junqiu Liu, Maxim Karpov, Anton Lukashchuk

Photonic integrated systems can be harnessed for fast and efficient optical telecommunication and metrology technologies. Here the authors develop a dual-soliton microcomb technique for massively parallel coherent laser ranging that requires only a single ...

Nature Portfolio2022

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Jean-Baptiste Leran, Raphaël François Lemerle, Wonjong Kim, Nicolas Tappy, Nicholas Paul Morgan, Akshay Balgarkashi, Titouan Charvin

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

2022