Publication
A bipolar resistive switching device including an electrically conductive bottom electrode, a stack of transition metal oxides layers, a number of transition metal oxide layers being equal or greater than 2, the stack including: at least one MOx layer, at least one oxygen gettering layer NOy, wherein the resistive switching device further includes an electrically conductive top electrode.
Nicola Marzari, Iurii Timrov, Eric Macke
Mohammad Samizadeh Nikooytabalvandani
Raffaella Buonsanti, Anna Loiudice, Krishna Kumar, Petru Pasquale Albertini, Coline Marie Agathe Boulanger, Jari Leemans, Ona Segura Lecina, Mark Adrian Newton, Philippe Benjamin Green