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Publications associées (63)

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Synthesis and characterization of group II-Vi semiconductor nanowires

Holger Jens Böttcher

Semiconductor nanowires are an emerging class of nanostructures that represent attractive building blocks for nanoscale electronic and photonic devices. To the present, nanowires are synthesized on a small scale by experimentally demanding gas phase deposi ...

EPFL2010

Light control and microcavity lasers based on quantum wires integrated in photonic-crystal cavities

Kirill Atlasov

Novel light-emitting devices and micro-optical-circuit elements will rely upon understanding and control of light-matter interaction at the nanoscale. Recent advances in nanofabrication and micro-processing make it possible to develop integrable solid-stat ...

EPFL2009

Gallium nitride (GaN) is one of the most interesting materials for devices applications such as blue light emitting diodes, laser diodes and high power and high temperature electronic applications, because of its large band gap (3.39 eV). Several growth te ...

EPFL2009

Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal

Elison de Nazareth Matioli

A noninvasive fabrication process involving soft nanoimprint lithography is used to pattern a photonic crystal (PhC) in titania film for enhanced light extraction from a GaN light emitting diode (LED). This technique avoids damaging the LED structure by th ...

American Institute of Physics2009

GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia, Gatien Cosendey

Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm(2) and a peak power of 140mW at 1.2A. (C) 2009 Optical Society of America ...

Ieee2009

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Exciton transfer between two parallel GaAs V-groove quantum wires (QWRs) or two planar quantum wells (QWs) separated by AlGaAs barriers ranging from 5.5 nm to 20 nm thickness is studied by photoluminescence (PL) and PL excitation (PLE) spectroscopy. It is ...

2009

Short (similar to 1 mu m) Quantum-Wire Single-Mode Photonic-Crystal Microcavity Laser

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Pascal Gallo, Kirill Atlasov, Milan Calic

High spontaneous-emission coupling and low-threshold lasing is achieved in semiconductor photonic-crystal cavities using short quantum wires. Lasing is established and characterized based on the linewidth narrowing and time-resolved photon dynamics. (C)200 ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Exciton localization and diffusion in low-dimensional nanostructures formed on non-planar substrates

Nicolas Moret

Quantum wells (QWs), quantum wires (QWRs) and quantum dots (QDs) are semiconductor heterostructures with nanoscopic dimensions. At this length scale, their properties are governed by quantum mechanics. The interest in these nanostructures is motivated by a ...

EPFL2008

In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...

EPFL2008

Dynamics of quantum dot lasers

Pablo Moreno

The exceptional performance of self-assembled Quantum Dot (QD) materials renders them extremely appealing for their use as optical communications devices. As lasers, they feature reduced and temperature independent threshold current and proper emission wav ...

EPFL2008