Unité

Laboratoire des matériaux semiconducteurs (SB/STI)

Laboratoire

Publications associées (62)

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Photoluminescence from a single InGaAs epitaxial quantum rod

Microphotoluminescence (mu-PL) experiment has been performed on a structure with InGaAs/GaAs epitaxial quantum rods (quantum dots with the aspect ratio as high as 4.1) grown by depositing short-period InAs/GaAs superlattice by molecular beam epitaxy on GaA ...

2008

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Marco Rossetti

A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...

EPFL2007

Picosecond time resolved cathodoluminescence to study semiconductor materials and heterostructures

Samuel Sonderegger

A large number of characterization tools for semiconductor based heterostructures are available nowadays. Most of these techniques deliver high temporal resolution (down to hundreds of femtoseconds) or good spatial resolution (down to sub nanometer resolut ...

EPFL2007

Solar photoelectrolysis of water with translucent nano-structured hematite photoanodes

Ilkay Cesar

In the context of the diminishing fossil energy resources and global warming, much research is focused on sustainable energy sources. The research that is presented in this thesis falls in this category as it contributes to the development of a device that ...

EPFL2007

Lattice-matched AlInN alloys for nitride-based optoelectronic devices

Julien Dorsaz

Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...

EPFL2006

Mesoscopic thin films of hematite as photoanode for water photoelectrolysis

Alexis Joseph Duret

Due to the limiting amount of fossil fuel available and to the continuous growth of the world energy consumption, it becomes important to find alternative energy sources. Hydrogen produced by the photoelectrolysis of water is a perfect candidate as a clean ...

EPFL2005

Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots

We report here photoluminescence studies of multilayer InAs quantum dot structures grown by MOVPE on (001)-oriented GaAs substrates. AFM measurements reveal prolate shapes of the dots, oriented along the [1-10] direction. Different orientations relative to ...

American Institute of Physics2005

Anisotropy of Absorption and Luminescence of Multilayer InAs/GaAs Quantum Dots

2005

AlGaN/GaN HEMTs on resistive Si(111) substrate: From material assessment to RF power performances

Nicolas Grandjean

In this paper, we report on the properties of GaN films and AlGaN/GaN HEMT structures grown by molecular beam epitaxy on resistive Si(111) substrates. The properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented. Finally, both static and hi ...

VCH Publishers2002

Photoconductance measurements and Stokes shift in InGaN alloys

Nicolas Grandjean

We report the results of photoluminescence (PL), transmission and photoconductance (PC) studies of InxGa1-xN alloys grown by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). First, we demonstrate that PC measurements allow to ...

2001