Laboratoire des circuits intégrés à signaux mixtes

Laboratoire

Publications associées (38)

Noise and small-signal modeling of nanoscale MOSFETs

Ananda Sankar Roy

After years of intensive research effort, the design of RF integrated circuits in CMOS has now reached a wide acceptance for industrial designs. This is due to the high unity gain frequency and low-noise performance of today's deep sub micrometer MOS trans ...

EPFL2007

Ultra Low-Power MEMS-based Radio for Wireless Sensor Networks

Christian Enz, Nicola Scolari

The recent advances made in MEMS and particularly in RF MEMS technology are enabling new architectures for the integration of RF transceivers with improved performance and smaller size. Several fundamental building blocks benefit from the availability of h ...

2007

Design and fabrication of suspended-gate MOSFETs for MEMS resonator, switch and memory applications

Nicolas Abelé

Wireless communication systems and handset devices are showing a rapid growth in consumer and military applications. Applications using wireless communication standards such as personal connectivity devices (Bluetooth), mobile systems (GSM, UMTS, WCDMA) an ...

EPFL2007

A standard CMOS multi-channel single-chip receiver for multi-gigabit optical data communications

Paul Victor Georges Muller

As dictated by ongoing technology scaling and the advent of multi-core systems, each new generation of microprocessors and digital signal processors provides higher computing power and data throughput. However, the available bandwidth of the input/output ( ...

EPFL2006

Integrated fluxgate compass for portable applications

Predrag Drljaca

Modern applications in industry, navigation and medicine demand small and sensitive magnetic field sensors. In this thesis we have developed a new planar micro fluxgate magnetometer. High resolution, low power consumption and orthogonal fields detection ma ...

EPFL2004

Hybrid CMOS-SET devices and circuits

Santanu Mahapatra

The quickening pace of the MOSFET technology scaling has pushed the MOSFET dimension towards 10 nanometer channel length, where it is going to face the following fundamental and performance limiting factors: (i) electrostatic limits, (ii) source to drain t ...

EPFL2004

Conception d'un émetteur-récepteur à faible consommation intégré en technologie CMOS

This thesis aims at developing wireless systems with a strong emphasis on low-power consumption and low-voltage operation. The main technical objective is the development of a single cells battery operated fully integrated CMOS RF transceiver that fulfills ...

EPFL2000

Design and analysis techniques for dynamic current mirrors

Today's world of electronics becomes more and more digital and therefore CMOS becomes the dominant technology. A CMOS process compared to a bipolar process offers several advantages, mainly a low power consumption which is important for portable systems po ...

EPFL1990