This lecture covers the fundamental concepts of carrier statistics and the Fermi level in semiconductors. It begins with a review of previous topics, including quantum dots and energy levels in conduction and valence bands. The instructor introduces the Fermi-Dirac distribution, explaining its significance in determining the probability of finding electrons and holes at various energy levels. The discussion progresses to the calculation of carrier density, integrating the density of states with the Fermi-Dirac distribution. The impact of temperature on carrier density is analyzed, highlighting how thermal energy influences the movement of charge carriers between bands. The lecture also addresses the effects of dimensionality and doping on carrier concentration, emphasizing the importance of the Fermi energy in these contexts. The instructor concludes by discussing practical applications, such as field-effect transistors, and the role of band alignment in optoelectronic devices. Overall, the lecture provides a comprehensive overview of how carrier statistics and the Fermi level govern the behavior of semiconductors.