Defect Creation in Large Area Electronic Materials

This lecture discusses the creation of defects in large area electronic materials, focusing on amorphous silicon. Topics include doping efficiency, electron spin resonance, estimated defect density, sub-gap absorption, light-induced defects, and equilibrium defect dynamics. The instructor presents observations on defect creation mechanisms, the impact of doping on defect density, and the role of recombination processes. Additionally, the lecture covers the curing of defects through annealing and the equilibrium defect density at high temperatures. Outdoor performance and annealing kinetics in devices are also explored, highlighting the interplay between defect formation and annealing in solar modules.