Focused Beam Lithography: E-Beam Basics

This lecture covers the principles of UV and DUV lithography, optical proximity correction, phase change masks, and immersion lithography. It then delves into electron beam lithography (EBL), discussing its basic concepts, pattern generation, resist materials, and electron optics. The lecture also explores electron guns, lens aberrations, and optics, highlighting the importance of field emitters, lens types, and aberration correction. Additionally, it explains the implementation of EBL, including the equipment setup, resist processing, and resolution capabilities. The lecture concludes with a comparison of EBL with other lithography methods and an overview of emerging nanofabrication techniques.