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Vincent Pott

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Related publications (17)

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Vincent Pott

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The high-mobility bended n-channel silicon nanowire transistor

Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)

The high-mobility bended n-channel silicon nanowire transistor

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon