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We have studied the interplay of a giant spin-orbit splitting and of quantum confinement in artificial Bi-Ag-Si trilayer structures. Angle-resolved photoelectron spectroscopy reveals the formation of a complex spin-dependent gap structure, which can be tuned by varying the thickness of the Ag buffer layer. This provides a means to tailor the electronic structure at the Fermi energy, with potential applications for silicon-compatible spintronic devices.
Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Samuel Burri, Arin Can Ülkü
Andras Kis, Dumitru Dumcenco, Olivier Renault, Dmitrii Unuchek, Hokwon Kim, Nicolas Chevalier
Majed Chergui, Marco Grioni, Arnaud Magrez, Helmuth Berger, Philippe Bugnon, Alberto Crepaldi, Luca Moreschini, Simon Karl Moser, Gianmarco Gatti, Serhii Polishchuk