Publication

GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia, Gatien Cosendey
2009
Conference paper

Abstract

Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm(2) and a peak power of 140mW at 1.2A. (C) 2009 Optical Society of America

Official source

https://infoscience.epfl.ch/record/153123?ln=en

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GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

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III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices