Publication
Low-temperature annealing of hydrogenated amorphous silicon (a-Si:H) is investigated. An identical energy barrier is found for the reduction of deep defects in the bulk of a-Si:H films and at the interface such layers form with crystalline Si (c-Si) surfaces. This finding gives direct physical evidence that the defects determining a-Si:H/c-Si interface recombination are silicon dangling bonds and that also kinetically this interface has no unique features compared to the a-Si:H bulk.
Christophe Ballif, Franz-Josef Haug, Mathieu Gérard Boccard
Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Andrea Ingenito, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann