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Maximizing the efficiency and power density of dc-dc converters demands parallel optimizations in design and control, especially for variable-frequency converters operating over wide frequency ranges. This work presents the full-scale optimization of a kilowatt-range MHz-class boost converter based on impulse rectification. To maximize the heat extraction from the converter and increase its power density, the entire power stage is implemented on a single-layer insulated-metal substrate (IMS). For high efficiencies over wide frequency ranges, high-performance Gallium Nitride (GaN) transistors are employed and various high-frequency materials (MnZn, NiZn, air) with different geometries are compared to realize a wide-bandwidth inductor. Silicon Carbide (SiC) Schottky diodes with zero reverse recovery are utilized for efficient high-frequency rectification, and the impact of the device current rating on its generated reactive power and the overall system efficiency is investigated at different power levels up to 1 kW. A proposed optimum duty cycle control maximizes the conversion efficiency at different gains and powers and prevents fatal device hard switching at high frequencies. The optimized converter enables a peak efficiency of 98.6% along with an ultra-high power density of 52 kW/l (850 W/inch3). A loss breakdown summarizes major efficiency bottlenecks to be overcome by future advances in power electronics.
Mario Paolone, Willem Lambrichts
Drazen Dujic, Andrea Cervone, Jules Christian Georges Macé, Max Dupont, Renan Pillon Barcelos