Person

Elison de Nazareth Matioli

Official source

https://people.epfl.ch/elison.matioli

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Ontological neighbourhood

Electrical engineering

Electronic engineering: Power electronics

Photonics: Topics in photonics

Physics

Condensed matter physics: Solid-state physics

Electromagnetism: Electrical networks

Computer engineering

Hardware engineering: Microprocessors

Related units (2)

Courses taught by this person (3)

Related publications (130)

Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.

People doing similar research (18)

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Elison de Nazareth Matioli

Graph Chatbot

Chat with Graph Search

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Chip-Scale Watt-Range Terahertz Generation Based on Fast Transition in Nanoplasma Switches

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures