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Publication
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We demonstrate an erbium-doped waveguide amplifier by erbium ion implantation in Si3N4 photonic integrated circuits, achieving 145 mW on-chip output power and more than 30 dB small-signal gain, which is on par with commercial fiber amplifiers and beyond state-of-the-art III-V heterogeneously integrated semiconductor amplifiers. (C) 2022 The Author(s)
Tobias Kippenberg, Rui Ning Wang, Xinru Ji, Zheru Qiu, Junqiu Liu, Yang Liu, Jijun He, Anton Lukashchuk
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