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Publication
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We demonstrate an erbium-doped waveguide amplifier by erbium ion implantation in Si3N4 photonic integrated circuits, achieving 145 mW on-chip output power and more than 30 dB small-signal gain, which is on par with commercial fiber amplifiers and beyond state-of-the-art III-V heterogeneously integrated semiconductor amplifiers. (C) 2022 The Author(s)
Tobias Kippenberg, Rui Ning Wang, Xinru Ji, Zheru Qiu, Junqiu Liu, Yang Liu, Jijun He, Anton Lukashchuk
Luc Thévenaz, Camille Sophie Brès, Can Yao