Optical amplifier | EPFL Graph Search

An optical amplifier is a device that amplifies an optical signal directly, without the need to first convert it to an electrical signal. An optical amplifier may be thought of as a laser without an optical cavity, or one in which feedback from the cavity is suppressed. Optical amplifiers are important in optical communication and laser physics. They are used as optical repeaters in the long distance fiberoptic cables which carry much of the world's telecommunication links. There are several different physical mechanisms that can be used to amplify a light signal, which correspond to the major types of optical amplifiers. In doped fiber amplifiers and bulk lasers, stimulated emission in the amplifier's gain medium causes amplification of incoming light. In semiconductor optical amplifiers (SOAs), electron-hole recombination occurs. In Raman amplifiers, Raman scattering of incoming light with phonons in the lattice of the gain medium produces photons coherent with the incoming photon

Ultra low quantum decoherence nano-optomechanical systems

Mohammadjafar Bereyhi

Thermal motion of a room-temperature mechanical resonator typically dominates the quantum backaction of its position measurement. This is a longstanding barrier for exploring cavity optomechanics at room temperature. In order to enter the quantum regime of the optomechanical interaction, we need to be in the "backaction-dominated" regime, where we can study the limits of quantum measurement and how to circumvent them. To create a system which can enter the quantum regime, the optomechanical transducer has to satisfy certain criteria. A quantum-enabled optomechanical system consists of an optical cavity and a mechanical resonator with ultra low quantum decoherence, which are strongly coupled to each other via the optomechanical interaction.High stress silicon nitride has enabled nanomechanical resonators with exceptionally low dissipation at room temperature via several soft-clamping techniques. Achieving high optomechanical coupling to these coherent nanobeams results in high optomechanical cooperativities, thus alleviating the thermal motion barrier for room temperature quantum optomechanics. Monolithic integration of high-Q nanobeam resonators with optical cavities has been limited to doubly-clamped nanobeams due to the complexity of the device fabrication and long device sizes required for conventional soft-clamping using phononic crystals. In addition, the previous demonstrations of such systems showed limited optomechanical couplings thus a limited single photon cooperativity.I present the design, fabrication and characterization of three different classes of nanomechanical resonators clamp-tapered, fractal-like, and polygon resonators, which support perimeter modes, with Q factors exceeding 3 billion at room temperature and their optical readout using an integrated nearfield nano-optomechanical transducer using high stress silicon nitride. Our transducer features a one-dimensional Fabry-Perot optical cavity integrated with a high-Q nanomechanical resonator. The Fabry-Perot optical cavity is formed by patterning two photonic crystal reflectors on a silicon nitride waveguide designed for high-Q optical modes. Our approach allows individual optimization of optical and mechanical resonators, while maintaining a high optomechanical coupling rate due to large optomechanical mode overlap. Our best performing devices show on-chip optomechanical transducers with single photon cooperativities as high as 123 with mechanical quality factor of 120 million at room temperature. The developed system is of great interest to the optomechanics and sensing community. In quantum optomechanics, it will serve as a platform for quantum feedback control of the nanomechanical resonators to achieve motional ground state of a macroscopic resonator and generation of squeezed light at room temperature. Owing to their record value mechanical quality factors, the room temperature force sensitivity of our highest Q perimeter modes is on par with atomic force microscopy cantilevers at millikelvin temperature.Complete documentation of a nanofabrication process is the key to its reproducibility. Process-specific details of the fabrication techniques are usually missing in journal publications. To bridge this gap, I developed NanoFab-net.org. An online open-access tool that allows sharing process-specific fabrication reports, extracting the metadata and obtaining a unique digital object identifier (DOI) for each report.

EPFL2022

Polarization properties of semiconductor quantum dot and dash lasers

Philipp Ridha

Self-assembled quantum-dots (QDs) represent a distributed ensemble of zero dimensional structures, each presenting a near-singular density of states. The QD size, shape, areal density and optical properties depend on growth parameters, such as growth temperature, growth rate and amount of InAs deposed. QDs are very suitable for optoelectronic device applications as during the epitaxial QD growth the phase transition relieves the strain elastically without introducing defects. Embedded in the active medium of a semiconductor laser diode QD's unique properties lead to improved and often novel characteristics as compared to bulk or quantum-well (QW) devices. In particular In(Ga)As QD lasers on GaAs substrates are of largest interest as the spectral range of their emission wavelength reaches further into the infrared than that of QW lasers of the same material system. The emission wavelength of strained InGaAs QW lasers is limited to about 1150nm, whereas in In(Ga)As QD lasers an emission wavelength beyond 1.3µm is feasible. Such kind of QD lasers performed – as recently reported – ultralow threshold current densities combined with decreased temperature sensitivity, relatively high modulation bandwith, low chirp, which has been already predicted many years ago. Beside quantum dot's application in semiconductor lasers, it has been suggested to use QDs also for the optical active region in so-called semiconductor optical amplifier (SOA). So far, experimentally it was possible to demonstrate in QD SOAs a much faster gain recovery time due to more effective carrier re-filling from excited states than in quantum well structures. Also a smaller noise figure ratio compared to QWs was predicted in QD SOA, but has not been experimentally demonstrated yet. However, two major constraints related to the limit of the high-frequency modulation of QD lasers and the QD SOA's polarization sensitivity are required to be first resolved, before it is possible to implement both technologies replacing QW devices in optical broad telecommunications devices. The polarization properties of semiconductor quantum dot/-dash lasers and amplifiers have been addressed in this PhD thesis. Within this research work – studying systematically several quantum dot and -dash heterostructure of different material families – two major goals have been identified: (1) characterization of the optical polarization properties of quantum dot/-dash structures embedded in the active region of semiconductor optical amplifiers and (2) realization of polarization-insensitive quantum dot based SOAs. Moreover, this thesis focuses on the understanding of the underlying physics being responsible for the QD's polarization and the dependence of the optical gain on the QD's aspect ratio and compositional material contrast. In terms of the experimental work broad area laser devices have been fabricated by applying different clean room processing methods like photolithography, metal deposition, wet and plasma etching. Through a subsequent device characterization using optoelectronic measurement techniques the polarization characteristics of dots and dashes have been accessed. From broad area laser device characterization – measuring the polarization-resolved edge-emitted electroluminescence (EL) – the polarization properties of standard Stranski-Krastanov (SK), closely- and columnar stacked InAs/GaAs quantum dots as well of closely-stacked InAs/InP quantum dots and columnar-stacked InAs/InP quantum dashes – in total 32 devices – have been evaluated. The comparison of the transversal magnetic (TM) versus -electric (TE) integrated EL signal for above heterostructures provided very promising results in order to achieve polarization-independent QD SOA: Starting from standard SK QDs – emitting dominantly in TE mode – it was possible first to enhance the TM EL signal compared to TE by epitaxial shape-engineering of the dot/dash structure of the QD's aspect ratio and the compositional material contrast in columnar-stacked InAs/GaAs (InAs/InP) QDs (QDashes), and then inverting the polarization direction from dominant TE towards dominant TM. The latter polarization transition has been also confirmed by photovoltage spectroscopy (PVS), and as well from room-temperature TM-lasing demonstration – both carried out by our research partner from the Cardiff University, Wales (UK). Introducing the well-known segment contact method for gain measurements, which is based on the analysis of the amplified spontaneous emission (ASE) generated by cavities of different length, it was possible to access both the TM and TE gain of such columnar-stacked InAs/GaAs quantum dots. The work was motivated and funded by the European Union project "Zero Order Dimension based Industrial components Applied to teleCommunications" (ZODIAC) within the sixth framework program. Very fruitful collaborations in order to exchange scientific ideas/know-how and achieving joint results have been established in a pan-European and multicultural inspired environment between four industrial partners – Alcatel Thales III-V Lab (France), Bookham (GB), Innolume – GmbH (Germany), Nanoplus Nanosystems and Technologies-GmbH (Germany) – and three national research institutes – Laboratory for Photonics and Nanostructures (France), The Tyndall National Institute (Irland), Saint-Petersburg Physics and Technology Centre for Research and Education of the Russian Academy of Science (Russia) – and three Universities: École Polytechnique Fédérale de Lausanne (Switzerland), Politechnika Wroclawska (Poland), Würzburg University (Germany). Besides this European ZODIAC project it was possible to establish with the Cardiff University, Wales (UK) a very constructive collaboration.

EPFL2008

Thulium Assisted Parametric Conversion from Near to Short Wave Infrared

Adrien Billat, Camille Sophie Brès, Steevy Joyce Cordette, Yu-Pei Tseng

We report an all-fiber continuous wave source, tunable between 1935-1980nm, based on parametric conversion combined with thulium amplification. More than 150mW of power and 30dB optical signal-to-noise ratio is obtained over the entire range. OCIS codes: (190.4975) Parametric processes, (230.2285) Fiber devices and optical amplifiers, (060.4370) Nonlinear optics, fibers.