High-electron-mobility transistorA high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.
Cathode-ray tubeA cathode-ray tube (CRT) is a vacuum tube containing one or more electron guns, which emit electron beams that are manipulated to display images on a phosphorescent screen. The images may represent electrical waveforms (oscilloscope), pictures (television set, computer monitor), radar targets, or other phenomena. A CRT on a television set is commonly called a picture tube. CRTs have also been used as memory devices, in which case the screen is not intended to be visible to an observer.
Field-effect transistorThe field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.
Silicon photonicsSilicon photonics is the study and application of photonic systems which use silicon as an optical medium. The silicon is usually patterned with sub-micrometre precision, into microphotonic components. These operate in the infrared, most commonly at the 1.55 micrometre wavelength used by most fiber optic telecommunication systems. The silicon typically lies on top of a layer of silica in what (by analogy with a similar construction in microelectronics) is known as silicon on insulator (SOI).
Carrier generation and recombinationIn the solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes.
Lattice constantA lattice constant or lattice parameter is one of the physical dimensions and angles that determine the geometry of the unit cells in a crystal lattice, and is proportional to the distance between atoms in the crystal. A simple cubic crystal has only one lattice constant, the distance between atoms, but in general lattices in three dimensions have six lattice constants: the lengths a, b, and c of the three cell edges meeting at a vertex, and the angles α, β, and γ between those edges.
Samsung ElectronicsSamsung Electronics Co., Ltd. (, sometimes shortened to SEC and stylized as SΛMSUNG) is a South Korean multinational major appliance and consumer electronics corporation headquartered in Yeongtong-gu, Suwon, South Korea. It is currently the pinnacle of the Samsung chaebol, accounting for 70% of the group's revenue in 2012. However, Lee Jae-yong has stated his intentions on making sure his children would not inherit significant Samsung Electronics positions, which would significantly change the chaebol's inner workings.
NanoparticleA nanoparticle or ultrafine particle is usually defined as a particle of matter that is between 1 and 100 nanometres (nm) in diameter. The term is sometimes used for larger particles, up to 500 nm, or fibers and tubes that are less than 100 nm in only two directions. At the lowest range, metal particles smaller than 1 nm are usually called atom clusters instead.
Indium phosphideIndium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine.
Optical computingOptical computing or photonic computing uses light waves produced by lasers or incoherent sources for data processing, data storage or data communication for computing. For decades, photons have shown promise to enable a higher bandwidth than the electrons used in conventional computers (see optical fibers). Most research projects focus on replacing current computer components with optical equivalents, resulting in an optical digital computer system processing binary data.
