Publications related to Insulated-gate bipolar transistor

Power and Area Efficient MOSFET-C Filter for Very Low Frequency Applications

New circuit design techniques for implementing very high-valued resistors are presented, significantly improving power and area efficiency of analog front-end signal processing in ultra-low power (ULP) biomedical systems. Ranging in value from few hundreds ...

Springer Verlag2012

A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

Jean-Michel Sallese, François Krummenacher, Antonios Bazigos, Matthias Bucher

This paper presents a novel physics-based analytical compact model for the drift region of a high-voltage metal-oxide-semiconductor field-effect transistor (HV-MOSFET). According to this model, the drift region is considered as a simple 1-D problem, just a ...

2011

Experimental Characterization of LLC Resonant DC/DC Converter for Medium Voltage Applications

Drazen Dujic, Akos Mester, Toufann Chaudhuri

Medium voltage (MV) power electronic transformers (PETs) are nowadays considered, for various industrial applications, as a viable replacement for bulky line-frequency operated transformers. In MV applications modularity in the converter design plays a ver ...

2011

Polymer-electrolyte gated graphene transistors for analog and digital phase detection

Klaus Kern, Marko Burghard, Kannan Balasubramanian, Adarsh Singh Sagar

We present an alternating current (ac) circuit based on a misoriented bilayer graphene device for analog and digital phase detection. We exploit the ambipolar nature of the transfer characteristics of a misoriented bilayer graphene transistor. The transist ...

2011

Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory

Mihai Adrian Ionescu, Didier Bouvet, Livio Lattanzio, Giovanni Antonio Salvatore

The performance of a standard MOSFET degrades with the increase in temperature, impacting the power consumption of the device. In this paper, we report the opposite trend, which is reflected in an improvement of main performance factors in ferroelectric FE ...

2011

Gyrotron parasitic-effects studies using the time-dependent self-consistent monomode code TWANG

Stefano Alberti, Jean-Philippe Hogge, Trach-Minh Tran, Fengping Li

Parasitic effects have recently appeared to be a potential limiting factor for reliable operation of high-power high-frequency gyrotrons. Within the domain of validity of a self-consistent monomode model, the time-dependent code TWANG has been developed wi ...

IEEE2011

Towards circuit design using VeSFETs

Maher Kayal, Jean-Michel Sallese, François Krummenacher, Marc Pastre, Lucian Barbut

This paper explores the potential of VeFETs for mixed-signal circuits. A new physics-based compact DC model of the VeSFET operated in subthreshold region is presented and used to derive 1st-order sensitivities of the device threshold voltage to process var ...

2011

The effects of channel length and film microstructure on the performance of pentacene transistors

Jürgen Brugger, Andreea Veronica Savu, Libero Zuppiroli, Katrin Sidler Arnet, Franziska Dora Fleischli

With the use of the stencil lithography, we fabricated pentacene thin-ﬁlm transistors pre- pared directly on thermally oxidized silicon gates with channel lengths ranging from 2 to 600 lm. By performing 4-probe measurements or by using the transfer line me ...

Elsevier2011

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Insulated-gate bipolar transistor

Power and Area Efficient MOSFET-C Filter for Very Low Frequency Applications

From All-Si Nanowire TFETs Towards III-V TFETs

A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

Experimental Characterization of LLC Resonant DC/DC Converter for Medium Voltage Applications

Polymer-electrolyte gated graphene transistors for analog and digital phase detection

Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory

Gyrotron parasitic-effects studies using the time-dependent self-consistent monomode code TWANG

Towards circuit design using VeSFETs

Integration of Engineered Source and Drain Extensions in Double Gate Mosfet with Sub-32nm Channel Length

The effects of channel length and film microstructure on the performance of pentacene transistors

Graph Chatbot

Chat with Graph Search

From All-Si Nanowire TFETs Towards III-V TFETs

A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

Experimental Characterization of LLC Resonant DC/DC Converter for Medium Voltage Applications

Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory

Gyrotron parasitic-effects studies using the time-dependent self-consistent monomode code TWANG

Towards circuit design using VeSFETs

The effects of channel length and film microstructure on the performance of pentacene transistors

Polymer-electrolyte gated graphene transistors for analog and digital phase detection

Power and Area Efficient MOSFET-C Filter for Very Low Frequency Applications

Integration of Engineered Source and Drain Extensions in Double Gate Mosfet with Sub-32nm Channel Length