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Traditional metal-oxide-semiconductor field effect transistor scaling has advanced successfully over 50 years providing significant increases in transistor count per chip and operating frequency, thus enabled the built of ever more performant and complex s ...
The increasing luminosity in HEP (High Energy Physics) colliders demands trigger systems to be more selective. First, more information from the detector is routed to the trigger system. Second, larger parts of this information are processed together. These ...
Self-heating is a crucial effect in integrated nanophotonic devices regarding their power consumption. In this work, we employ coupled 3D thermo-electrical simulations to gain insight into the thermal behavior related to traps in a monolithic InP-InGaAs-In ...
Downscaling of the minimal feature size, or the gate length has been the key for the exponential im-provement of the performance of the logic CMOS integrated circuits over the last six decades. How-ever, since about 2003, some fundamental limits in the dev ...
As memory density continues to grow in modern systems, accurate analysis of SRAM stability is increasingly important to ensure high yields. Traditional static noise margin metrics fail to capture the dynamic characteristics of SRAM behavior, leading to exp ...
Institute of Electrical and Electronics Engineers2015
An important prerequisite for the design of digital integrated circuits is the ability to control the threshold voltage of the individual transistors during manufacturing. To address the problem of controlling the threshold voltage of low-voltage organic t ...
We have investigated two possible fields of application for carbon nanotube (CNT) networks in flexible displays. Transparent and conductive layers of CNTs were spray coated onto glass and plastic substrates. The spectral transmission of the produced layers ...
This paper describes the first VLSI implementation of lattice reduction (LR) aided multi-antenna broadcast precoding with vector perturbation. The considered LR scheme is based on Brun's algorithm for finding integer relations. We analyze its high-level ar ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007
Nanowire Field Effect Transistors (FETs) with multiple independent gates around a silicon channel feature ultimate gate control and are regarded as promising candidates for next generation transistors. Being inherently more complex than conventional gate-a ...
Institute of Electrical and Electronics Engineers2016
Transconductance efficiency (g(m)/I-D) is an essential design synthesis tool for low-power analog and RF applications. In this paper, the invariance of g(m)/I-D versus normalized drain current curve is analyzed in an asymmetric double-gate (DG) fully deple ...