Concept

Transistor computer

Publications associées (14)

Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode

Self-heating is a crucial effect in integrated nanophotonic devices regarding their power consumption. In this work, we employ coupled 3D thermo-electrical simulations to gain insight into the thermal behavior related to traps in a monolithic InP-InGaAs-In ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Utilizing XMG-based Synthesis to Preserve Self-Duality for RFET-Based Circuits

Giovanni De Micheli, Alessandro Tempia Calvino, Heinz Riener, Shubham Rai, Akash Kumar

Individual transistors based on emerging reconfigurable nanotechnologies exhibit electrical conduction for both types of charge carriers. These transistors (referred to as Reconfigurable Field-Effect Transistors (RFETs)) enable dynamic reconfiguration to d ...

2022

Low-Latency High-Bandwidth Circuit and System Design for Trigger Systems in High Energy Physics

Marcos Vinícius Silva Oliveira

The increasing luminosity in HEP (High Energy Physics) colliders demands trigger systems to be more selective. First, more information from the detector is routed to the trigger system. Second, larger parts of this information are processed together. These ...

EPFL2021

Predictive Reliability and Fault Management in Exascale Systems

David Atienza Alonso, Marina Zapater Sancho

Performance and power constraints come together with Complementary Metal Oxide Semiconductor technology scaling in future Exascale systems. Technology scaling makes each individual transistor more prone to faults and, due to the exponential increase in the ...

2020

Fabrication and Characterisation of Epitaxial PMN-PT Nano-structures

Xiao Di

Downscaling of the minimal feature size, or the gate length has been the key for the exponential im-provement of the performance of the logic CMOS integrated circuits over the last six decades. How-ever, since about 2003, some fundamental limits in the dev ...

EPFL2019

Experimental g(m)/I-D Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET

Jean-Michel Sallese, Christophe Lallement

Transconductance efficiency (g(m)/I-D) is an essential design synthesis tool for low-power analog and RF applications. In this paper, the invariance of g(m)/I-D versus normalized drain current curve is analyzed in an asymmetric double-gate (DG) fully deple ...

2018

Computationally Efficient Multiple-Independent-Gate Device Model

Giovanni De Micheli, Mariagrazia Graziano, Pierre-Emmanuel Julien Marc Gaillardon, Gianluca Piccinini

Nanowire Field Effect Transistors (FETs) with multiple independent gates around a silicon channel feature ultimate gate control and are regarded as promising candidates for next generation transistors. Being inherently more complex than conventional gate-a ...

Institute of Electrical and Electronics Engineers2016

A Fast Modular Method for True Variation-Aware Separatrix Tracing in Nanoscaled SRAMs

Adam Shmuel Teman

As memory density continues to grow in modern systems, accurate analysis of SRAM stability is increasingly important to ensure high yields. Traditional static noise margin metrics fail to capture the dynamic characteristics of SRAM behavior, leading to exp ...

Institute of Electrical and Electronics Engineers2015

Practical Applications of Tunnel Field Effect Transistors

Traditional metal-oxide-semiconductor field effect transistor scaling has advanced successfully over 50 years providing significant increases in transistor count per chip and operating frequency, thus enabled the built of ever more performant and complex s ...

EPFL2015

Fluoroalkylphosphonic acid self-assembled monolayer gate dielectrics for threshold-voltage control in low-voltage organic thin-film transistors

Klaus Kern, Hagen Klauk, Frederik Sebastian Ante

An important prerequisite for the design of digital integrated circuits is the ability to control the threshold voltage of the individual transistors during manufacturing. To address the problem of controlling the threshold voltage of low-voltage organic t ...

2010

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