Aluminium oxide | EPFL Graph Search

Aluminium oxide (or Aluminium(III) oxide) is a chemical compound of aluminium and oxygen with the chemical formula . It is the most commonly occurring of several aluminium oxides, and specifically identified as aluminium oxide. It is commonly called alumina and may also be called aloxide, aloxite, or alundum in various forms and applications. It occurs naturally in its crystalline polymorphic phase α-Al2O3 as the mineral corundum, varieties of which form the precious gemstones ruby and sapphire. Al2O3 is significant in its use to produce aluminium metal, as an abrasive owing to its hardness, and as a refractory material owing to its high melting point. Natural occurrence Corundum is the most common naturally occurring crystalline form of aluminium oxide. Rubies and sapphires are gem-quality forms of corundum, which owe their characteristic colours to trace impurities. Rubies are given their characteristic deep red colour and their laser qualities by traces of chromium. Sapp

Contact resistance effects in organic n-channel thin-film transistors

Reinhold Rödel

Organic thin-film transistors (TFTs) have undergone tremendous progress in the past few years. Their great potential in terms of mechanical flexibility, light weight, low-cost and large-area fabrication makes them promising candidates for novel electronic products, such as sensor arrays, radio-frequency identification tags and flexible displays. For the realization of these applications and to improve their performance it is necessary to miniaturize organic TFTs to dimensions of a few micrometers or even less. However, with such aggressive scaling, the device physics becomes more and more important. Especially the contact resistance at and close to the interface between the organic semiconductor and the source/drain metal limits the performance of the organic TFTs at miniaturized dimensions. In this thesis, the contact properties of bottom-gate, top-contact n-channel organic transistors are investigated using the gated four-probe (GFP) technique. The TFTs employ the small-molecule semiconductor N,N'-bis-(1H,1H-heptafluorobutyl)-1,7-dicyano-perylene-3,4:9,10-tetracarboxylic diimide (PDI-FCN2) and are fabricated on flexible plastic substrates. The transistors are air-stable and can be operated at low voltages of about 3 V, owing to a thin hybrid gate dielectric composed of aluminum oxide and a self-assembled molecular monolayer. The GFP method enabled a detailed investigation of the influence of a multitude of factors, including the gate-source and drain-source voltages, the contact length, the temperature and the contact metal, on the contact resistance. The contact properties are found to be very sensitive to the thickness of the organic semiconductor layer. In transistors in which this layer is relatively thin, ohmic contact resistances as small as about 0.6 Ohm cm were measured. In transistors with a relatively thick organic semiconductor layer, device physics becomes more complex and the current-voltage characteristics of the contact become nonlinear. Space-charge limited currents are identified as the probable origin of this nonlinear behavior. The good performance of the PDI-FCN2 transistors allows the realization of simple integrated circuits. Flexible organic complementary ring oscillators are fabricated and signal propagation delays per stage as short as 6 µs are demonstrated at a supply voltage of 3.6 V.

EPFL2016

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high-integration density, but also to replace thin-film transistors in large-area electronics. This thesis investigates the use of wet-chemically grown ZnO nanowires for the fabrication of high-performance, low-voltage field-effect transistors (FETs). The first part of this thesis addresses the electrical characteristics of the wet-chemically grown ZnO nanowires. The as-grown ZnO nanowires are highly conductive due to a large charge-carrier concentration caused by dopants unintentionally incorporated into the ZnO nanowires during the synthesis. This large charge-carrier concentration makes it difficult to modulate the conductivity of the nanowires by an external electric field, so that the as-grown wires are not suitable for FETs. A post-growth annealing step is employed to dramatically reduce the charge-carrier concentration of the nanowires which makes it possible to fabricate FETs with useful characteristics. ZnO-nanowire FETs in a global back-gate geometry based on annealed ZnO nanowires have a transconductance of 300 nS, an on/off current ratio of 107 and a subthrehold slope of 500 mV/decade. The maximum field-effect mobility of the annealed ZnO nanowires is around 50 cm2/Vs. An important requirement to obtain good FET characterisitcs is to minimize the influence of the source and drain contact resistance on the total device resistance. The material used for the source and drain contacts in this thesis is aluminum. It is demonstrated that the use of a plasma treatment in the contact regions prior to the evaporation of the aluminum contacts can greatly influence the contact properties between ZnO and aluminum. An argon-plasma treatment locally increases the charge-carrier concentration in the ZnO. It is shown that the doping effect of the argon-plasma treatment can be exploited to reduce the contact resistance between alumiunm and ZnO and improve the electrical performance of the FETs. In the second part of this thesis, the influence of the ambient air on the electrical characteristics of the ZnO-nanowire FETs is investigated. The electrical conductivity of the FETs is strongly affected by the distinct atmospheric conditions, which makes it difficult to obtain reliable FET characteristics. The potential of a self-assembled monolayer (SAM) based on fluoroalkylphosphonic acid molecules to passivate the ZnO nanowires against the undesirable effects of the ambient and to stabilize the electrical performance of ZnO-nanowire FETs is demonstrated. The stabilizing effect is attributed to the formation of a densely packed, hydrophobic SAM on the surface of ZnO and aluminum oxide. The quality of the hydrophobic SAMs is confirmed by means of water-contact-angle measurements on SAM-covered ZnO single crystals that show a contact angle of more than 110°. The third part of this thesis is dedicated to the fabrication of high-performance ZnO-nanowire FETs with patterned metal top-gate electrodes. A top-gate fabrication process is developed that uses a very thin gate dielectric consisting only of an alkylphosphonic acid SAM that can be deposited from solution. The insulating quality of the SAM is investigated for top-gate FETs that utilize either gold or aluminum for the top-gate electrode. Gold top-gate FETs show a transconductance of 1 µS, an on/off current ratio of 107, and a steep subthreshold slope of 90 mV/decade. The thin gate dielectric makes it possible to operate the gold top-gate FETs at low voltages of 1 V and simultaneously reduces the undesired gate current by more than three orders of magnitude compared to gold top-gate FETs that have been fabricated without a gate dielectric (MESFETs). The gate current of the gold top-gate FETs with SAM gate dielectric is as low as 1 pA for gate-source voltages between -1 V and 0.5 V. When aluminum is used for the top-gate electrode, a hybrid dielectric is formed at the interface between the SAM and the aluminum, consisting of the SAM and a spontaneously formed aluminum oxide layer. Owing to the hybrid gate dielectric, the aluminum top-gate FETs are operated with gate currents below 1 pA for voltages up to 3 V. The top-gate fabrication process does not require temperatures above 160 °C, which makes it possible to fabricate FETs on unconventional substrates that cannot tolerate high temperatures, such as glass or flexible plastics. Integrated circuits on single ZnO nanowires that are fabricated on glass and plastic substrates are demonstrated. The maximum switching frequency of the inverters is 1 MHz.

EPFL2011

Heat treatment of carbon anodes for the aluminum industry

Mauriz Lustenberger

Aluminum is produced by the electrolytic reduction of alumina dissolved in molten cryolite. This process requires carbon anodes which are consumed during the electrolysis. The anodes contribute roughly with 15% to the total aluminum production cost. If the anode quality is poor the share can as well reach 25 %. It is known that the anode behavior during aluminum electrolysis is significantly influenced by the anode baking process. However, there is a lack of knowledge to predict the anode behavior through given baking parameters. In addition, process control of industrial furnaces is still to a large degree empirical. Often the emission of industrial furnaces causes problems as deposits can accumulate in the exhaust system which leads to fire incidents. This investigation has three major goals: The prediction of the anode behavior during electrolysis for a given heat treatment. The understanding of the process control of industrial scale open-top anode baking furnaces. The emission control of the open-top anode baking furnace. The baking parameters are defined in this thesis as the anode heat-up rate and the baking level. Through pilot baking it is shown that the baking level is basically determined by the final baking temperature although the soaking duration has some influence too. The anode baking level can be estimated with a calculation for any given baking curve. Therefore the impact of the temperature and soaking duration on the real density anode property needs to be determined through a pilot study. The optimum baking parameters regarding the anode behavior during electrolysis depend on the material. Some anode materials react more sensitive to the heat treatment than others do and are therfore more difficult to handle in the industrial baking process. Through pilot scale anode baking it is shown how to predict the anode behavior during electrolysis. Process control of the anode baking in industrial open-top furnaces is complex since the anode baking is indirectly controlled by the combustion process inside the flues. Through measurements the combustion process is analyzed in this thesis. The results show that a furnace operated at its physical limits is difficult to control regarding to emissions. However, the gained knowledge allows to optimize existing furnace process control systems. The furnace emissions are mainly caused by insufficient combustion of the pitch fumes formed during the pyrolysis of the anode binder pitch. It is shown that emission problems cannot always be solved by a well chosen control system setup. In such a situation combustion control is required in addition to temperature control. A technology has been developed to measure online the combustion situation of each flue. For this purpose 2-color pyrometers, together with an intelligent signal processing, are required. This technology is integrated since 10 months in an industrial baking furnace control system. The results are promising. The developed technology is an important step for furnace operation at maximum productivity and minimum emission. A patent has been applied for the combination of online combustion analysis concurrent with temperature measurement (swiss apply No. 01598/02 by Mauriz Lustenberger and Felix Keller, R&D Carbon Ltd. Sierre).

EPFL2004