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Nanoporous SiO2 and nanocomposite MgF2:SiO2 coatings have been deposited by sol gel dip-coating in a particle-free atmosphere. The refractive index of the prepared nanostructured thin films is determined from spectrophotometric data. In both cases, signifi ...
We model the fundamental kinetic processes occurring during silicon oxidation at the atomic scale. We first focus on the diffusion of the, neutral O-2 molecule through the oxide layer. By combining ab initio and classical simulations, we derive a statistic ...
Iron isotopes were used to investigate iron transformation processes during an in situ field experiment for removal of dissolved Fe from reduced groundwater. This experiment provided a unique setting for exploring Fe isotope fractionation in a natural syst ...
We study the infrared properties of the Si-SiO2 interface within a first-principles approach. In order to provide an atomic-scale description of the dielectric permittivity (both high-frequency and static) and of the infrared absorption at the interface, w ...
We demonstrate a program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2-Al2O3 nanolaminate (HAN)/Al2O3. The memory capacitor exhibits a high capacitance density of 4.5 fF/mu m(2), a large memory window of 1.45 V in the ...
We describe the construction and performance of dye-sensitized solar cells (DSCs) based on arrays of ZnO nanowires coated with thin shells of amorphous Al2O3 or anatase TiO2 by atomic layer deposition. We find that alumina shells of all thicknesses act as ...
This work aims to investigate, by means of numerical simulation, the evolution of free surface flow in aluminium production cells, and especially the magnetohydrodynamic instabilities. We design a numerical method combining a level-set technique together w ...
In this work, we have modified a low-temperature thick-film system previously developed for aluminium and aluminium alloy substrates in order to adapt it to ferritic and austenitic stainless steel, and glass substrates, which, unlike the common alumina sub ...
In this work, a set of low-temperature thick-film dielectrics consisting of two high-lead low-temperature glasses, stabilised by various amounts of alumina filler, is characterised on alumina and aluminium metal, as a function of firing temperature. Corres ...
During atomic layer deposition of high permittivity (high-k) metal oxide gate dielectrics, an interfacial layer (IL) containing SiOx between high-k dielectric and Si substrate is almost unavoidable. However, an Al(CH3)(3) (TMA) pretreatment for 3600 s on H ...