Rutherford backscattering spectrometry

Summary

Rutherford backscattering spectrometry (RBS) is an analytical technique used in materials science. Sometimes referred to as high-energy ion scattering (HEIS) spectrometry, RBS is used to determine the structure and composition of materials by measuring the backscattering of a beam of high energy ions (typically protons or alpha particles) impinging on a sample. Geiger–Marsden experiment Rutherford backscattering spectrometry is named after Lord Rutherford, a physicist sometimes referred to as the father of nuclear physics. Rutherford supervised a series of experiments carried out by Hans Geiger and Ernest Marsden between 1909 and 1914 studying the scattering of alpha particles through metal foils. While attempting to eliminate "stray particles" they believed to be caused by an imperfection in their alpha source, Rutherford suggested that Marsden attempt to measure backscattering from a gold foil sample. According to the then-dominant plum-pudding model of the atom, in which small negative electrons were spread through a diffuse positive region, backscattering of the high-energy positive alpha particles should have been nonexistent. At most small deflections should occur as the alpha particles passed almost unhindered through the foil. Instead, when Marsden positioned the detector on the same side of the foil as the alpha particle source, he immediately detected a noticeable backscattered signal. According to Rutherford, "It was quite the most incredible event that has ever happened to me in my life. It was almost as incredible as if you fired a 15-inch shell at a piece of tissue paper and it came back and hit you." Rutherford interpreted the result of the Geiger–Marsden experiment as an indication of a Coulomb collision with a single massive positive particle. This led him to the conclusion that the atom's positive charge could not be diffuse but instead must be concentrated in a single massive core: the atomic nucleus. Calculations indicated that the charge necessary to accomplish this deflection was approximately 100 times the charge of the electron, close to the atomic number of gold.

Official source

https://en.wikipedia.org/wiki/Rutherford_backscattering_spectrometry

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Related publications (3)

Related people (1)

Related concepts (5)

Related courses (1)

Related lectures (12)

Controlling PbI2 Stoichiometry during Synthesis to Improve the Performance of Perovskite Photovoltaics

Mohammad Khaja Nazeeruddin, Vikas Kumar

Over the past decade, remarkable progress has advanced the field of perovskite solar cells to the forefront of thin film solar technologies. The stoichiometry of the perovskite material is of paramount importance as it determines the optoelectronic properties of the absorber and hence the device performance. However, little published work has focused on the synthesis of fully stoichiometric precursor materials of high purity and at high yield. Here, we report a low-cost, energy-efficient, and solvent-free synthesis of the lead iodide precursor by planetary ball milling. With our synthetic approach, we produce low-oxygen, single or multiple polytypic phase PbI2 with tunable stoichiometry. We determine the stoichiometry and the polytypes present in our synthesized materials and further compare them to commercially available materials, using X-ray diffraction, X-ray photoelectron spectroscopy, and Rutherford backscattering spectroscopy. Both the stoichiometric PbI2 we synthesized and a substoichiometric commercially available PbI2 (where the iodide content is below the optimum Pb:I atomic ratio of 1:2) were used to grow methylammonium lead iodide microcrystals (which corrects the iodide content). Perovskite solar cells were then produced using stoichiometric and substoichiometric PbI2 mixed with an equimolar amount of methylammonium iodide and compared to devices produced from re-dissolved microcrystals. The photoactive perovskite layer deposition was processed in air, enabled by the use of a single low-toxicity solvent (dimethyl sulfoxide) combined with vacuum-assisted solvent evaporation. We find that the device performance is strongly dependent upon the stoichiometry of the lead iodide precursor, reaching champion efficiencies over 17%, with no obvious correlation with its polytypic phases. This work highlights the critical role of PbI2 stoichiometry in hybrid perovskites as well as demonstrating synthesis methods and perovskite layer fabrication protocols suitable for low-cost solar energy harvesting.

2021

Nanocomposite coatings composed of two phases with atomically sharp phase boundaries, show interesting mechanical properties. These properties are often originating from their high interface to volume ratio. Composites of nanocrystalline titanium nitride (TiN) grains surrounded by a one to two monolayer thick interlayer of silicon nitride (Si3N4) show an enhanced nanohardness. The central theme of this thesis is concernedwith the interfacial properties of two-dimensional bilayer systems, which are used as model systems to describe the interfaces occurring in nanocomposite coatings. The systems under investigation are TiN interfaces in contact with silicon (Si), silicon nitride (Si3N4) and aluminum nitride (AlN). The primary tool used to analyze the interfaces of bilayer systems is X-ray Photoelectron Spectroscopy (XPS) with emphasis put on the shake-up feature of the Ti 2p photoelectron line. Shake-ups in TiN are observed as an additional peak on the lower binding energy side of the energy lines of the Ti 2p orbitals. Shake-ups are strongly influenced by valence electrons and electron density distributions. This makes them a powerful tool to probe the chemical and electronic structure of TiN interfaces. The aim of this study is to utilize the shake-up energy and its intensity to gain insight into interfacial structures and correlate their changes to interfacial polarization and macroscopic mechanical properties. Single crystalline (sc-) and oxygen-free TiN as well as oxygen-free bilayer systems were deposited by unbalanced magnetron sputtering and analyzed by Angle Resolved (AR-)XPS. Bilayer samples were deposited and their quality was controlled using X-ray diffraction (crystallinity), Rutherford back scattering (elemental composition), and atomic force microscopy (roughness). All XPS samples were fabricated, transfered and analyzed whilst maintaining ultra high vacuum. A precise and self-consistent XPS data processing method was developed to evaluate Ti 2p spectra. This method accounts for the correct photoelectron line shape, background subtraction and photoelectron peak area intensity. Binding energy, shake-up energy and intensity ratios of shake-ups taken frompristine TiN surfaces are precisely determined, and the influence of oxygen on the information content in peak positions and intensities was investigated. The shake-up energy and intensity of bulk sc-TiN and its origin of the shake-up are discussed. An analytical description for the XPS signal ratio of bilayer systems is derived to separate the interfacial signals from the bulk information. The results obtained by this analytical description are strongly influenced by the interface thickness that has been found to be proportional to the overlayer thickness. The revealed interface properties show a correlation between the shake-up intensity and the interface morphology, oxygen content, overlayer material and overlayer thickness. AR-XPS and X-ray Photoelectron Diffraction (XPD) results were used to interpret the crystalline structure of the different TiN/AlN and TiN/Si3N4 bilayer systems. AlN shows XPD patterns indicating a crystalline growth of AlN on sc-TiN. The electrically insulating AlN overlayer creates a charge accumulation at the TiN interface, which results in an enhanced shake-up intensity. XPD patterns of Si3N4 systems revealed a crystalline growth of Si3N4 in the first 0.6nm. The intensity of the diffraction patterns reduces with increasing Si3N4 overlayer thickness due to a change in the growth behavior from crystalline to amorphous structures. Si3N4 films show, in comparison to AlN, reduced interface charging and hence a lower shakeup intensity. The crystalline growth of Si3N4 in the initial stages is hindered in systems where a bias voltage is applied to the substrate during the deposition process. In contrast to the unbiased systems, which have crystalline interfacial structures, the biased systems no longer show XPD patterns due to a loss of crystallinity. Additionally the shake-up intensity of biased systems is thickness-independent, which is in contrast to unbiased systems. The difference in the shake-up intensity of biased and unbiased Si3N4 is explained by a different band gap of the Si3N4 structure in the first two monolayers. This thesis shows that the increase in the shake-up intensity is correlated to intrinsic and extrinsic interface charging. The obtained results, in combination with theoretical structure models from literature, show that in one to two monolayer thick interlayers a build-up of interface polarization is unlikely. The observed nanohardness enhancement in TiN/Si3N4 systems is explained with already known hardness effects.

EPFL2012

Free carriers in nanocrystalline titanium dioxide thin films

Simon Springer

This thesis analyzes the properties of heavily doped nanocrystalline titanium dioxide. Thin films were deposited by magnetron sputtering with either water vapor as reactive gas or a periodically interrupted oxygen supply. The samples were at the same time electrically conducting and transparent. They consisted of mixtures of rutile, anatase and amorphous phases. Titanium dioxide is chemically stable, hard, non-toxic, transparent, and inexpensive. Due to a high refractive index it is often found in optical applications as a thin film coating. For many purposes it is interesting to take advantage of a combination of good transparency and electrical conductivity. An even larger field of applications would open if the electric conductivity of TiO2 could be increased in a controlled manner. Conventional bulk doping is limited, however, by low solubility limits. Highly conducting nanocrystalline TiO2 thin films have been obtained recently by sputtering in presence of water vapor. The present project intends to elucidate the doping mechanisms at work in such films. In addition, an alternative process to achieve grain-boundary doping of TiO2 was explored. Spectrophotometry over a wide spectral range (0.05 to 5 eV) was the main tool in probing the mobile electrical charge carriers. The interpretation of these optical measurements required appropriate models. The models developed took many structural properties into account, such as thickness, surface roughness, density, anisotropy and crystalline phase composition. The phase and morphology of the films were analyzed by X-ray diffraction and reflection, scanning probe microscopy, and electron microscopy. The chemical analyses included electron-probe microanalyses, Rutherford backscattering and elastic recoil detection analysis. The DC electrical properties were measured between room temperature and 250 °C. Most water-deposited samples showed semiconducting behavior with an activation energy of the order of 100 meV. The optical measurements revealed a broad absorption band around 1 eV. The absorption coefficient scaled with conductivity. It was successfully modelled as a Lorentzian. Similar absorption bands have been reported for reduced rutile and anatase single crystals. Water-deposited samples containing anatase exhibited a metallic behavior. In these samples the thermal activation energy was reduced to about 30 meV and the charge carriers displayed a high mobility (3 cm2V-1s-1). The infrared absorption band was about 10 times less important than in the samples devoid of anatase. Thin films of TiO2 intercalated with the equivalent of nanometer-thick layers of Ti were prepared. By changing the period in the oxygen supply the grain size, and thereby the film properties, could be modified. The films obtained in this way had many properties in common with water-deposited films. They showed the same absorption band in the infrared, had comparable charge carrier densities and were electrically conductive (102 to 104 Sm-1 at room temperature). To our knowledge, this was the first time that such high electrical conductivities were achieved by sputtering in an oxygen plasma.

EPFL2004