Concept

Threshold voltage

Related publications (357)

On performance of series connected CMOS vertical hall devices

Series connected (stacked) CMOS vertical Hall devices were analyzed on the basis of performance of a single five contacts device biased at different common mode voltages with respect to the substrate. The uneven influence of junction field effect on residu ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

Near-field imaging of Bloch surface waves on silicon nitride one-dimensional photonic crystals

Hans Peter Herzig, Tristan Sfez, Francesco Michelotti

We perform a near-field mapping of Bloch Surface Waves excited at the truncation interface of a planar silicon nitride multilayer. We directly determine the field distribution of Bloch Surface Waves along the propagation direction and normally to the surfa ...

2008

Unique carbon-nanotube field-effect transistors with asymmetric source and drain contacts

Nicola Marzari, Ho Ling Li

We have fabricated a type of unique single-walled carbon nanotube field-effect transistor, in which the channel length is only 90 nm and aluminum and gold are used as its drain and source electrodes, respectively. The channel conductance oscillations cause ...

2008

Global and local charge trapping in carbon nanotube field-effect transistors

Nicola Marzari, Ho Ling Li

The influences of trapped charges on carrier transport in carbon nanotubes (CNTs) are studied using CNT field-effect transistors with a partial top-gate and a global back-gate. Trapped charges induced by the global back-gate voltage sweeping (+/- 20 V) pro ...

2008

Semiconductor device for measuring ultra small electrical currents and small voltages

Radivoje Popovic, Marc Lany

A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal (1, 2), an input terminal (3) for receiving an electrical current or being supplied with a ...

2008

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Vincent Pott

The recently proposed PIMOS transistor can offer, by appropriate operation, non-hysteretic abrupt off-on transitions due to impact ionization if the action of its parasitic bipolar transistor is minimized. This work proposes non-hysteretic abrupt inverter ...

2008

Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

Jean-Michel Sallese, François Krummenacher, Christophe Lallement

A physics-based compact model including short-channel effects (SCEs) is presented for undoped (or lightly doped) symmetric double-gate (DG) MOSFETs. Our approach allows an accurate description of the device behavior down to 60 nm with a simple set of equat ...

2008

Subthreshold Source-Coupled Logic Circuits for Ultra Low Power Applications

Seyed Armin Tajalli, Eric Vittoz, Yusuf Leblebici

This article presents a novel approach for implementing ultra-low power digital components and systems using source-coupled logic (SCL) circuit topology, operating in weak inversion (sub-threshold) regime. PMOS transistors with shorted drain-substrate cont ...

2008

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Luca De Michielis

This paper reports on the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on bulk silicon using a local-silicon-on-insulator (SOI) process. The proposed local-SOI ...

2008

Abrupt current switching due to impact ionization effects in Ω-MOSFET on low doped bulk silicon

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott

In this paper, we report very abrupt current switching and hysteresis effects due to saddle point and impact ionization in low doped n-channel Omega-Gate MOSFET (Ω-MOSFET). The Ω-MOSFETs are fabricated on low-doped (8×1014cm-3) bulk silicon by bulk silicon ...

2008

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.