Related publications (38)

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

Stefaan De Wolf

Low-temperature (≤200 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and ...
American Institute of Physics2014

Diffusion in confinement: kinetic simulations of self- and collective diffusion behavior of adsorbed gases

Berend Smit

The self- and collective-diffusion behaviors of adsorbed methane, helium, and isobutane in zeolite frameworks LTA, MFI, AFI, and SAS were examined at various concentrations using a range of molecular simulation techniques including Molecular Dynamics (MD), ...
2012

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