Trimethylaluminium

Trimethylaluminium is one of the simplest examples of an organoaluminium compound. Despite its name it has the formula Al2(CH3)6 (abbreviated as Al2Me6 or TMA), as it exists as a dimer. This colorless liquid is pyrophoric. It is an industrially important compound, closely related to triethylaluminium. The structure and bonding in Al2R6 and diborane are analogous (R = alkyl). In Al2Me6, the Al-C(terminal) and Al-C(bridging) distances are 1.97 and 2.14 Å, respectively. The Al center is tetrahedral. The carbon atoms of the bridging methyl groups are each surrounded by five neighbors: three hydrogen atoms and two aluminium atoms. The methyl groups interchange readily intramolecularly. At higher temperatures, the dimer cracks into monomeric AlMe3. TMA is prepared via a two-step process that can be summarized as follows: 2 Al + 6 CH3Cl + 6 Na → Al2(CH3)6 + 6 NaCl Starting with the invention of Ziegler-Natta catalysis, organoaluminium compounds have a prominent role in the production of polyolefins, such as polyethylene and polypropylene. Methylaluminoxane, which is produced from TMA, is an activator for many transition metal catalysts. TMA is also used in semiconductor fabrication to deposit thin film, high-k dielectrics such as Al2O3 via the processes of chemical vapor deposition or atomic layer deposition. TMA is the preferred precursor for metalorganic vapour phase epitaxy (MOVPE) of aluminium-containing compound semiconductors, such as AlAs, AlN, AlP, AlSb, AlGaAs, AlInGaAs, AlInGaP, AlGaN, AlInGaN, AlInGaNP, etc. Criteria for TMA quality focus on (a) elemental impurities, (b) oxygenated and organic impurities. In deposition processes very similar to semiconductor processing, TMA is used to deposit thin film, low-k (non-absorbing) dielectric layer stacks with Al2O3 via the processes of chemical vapor deposition or atomic layer deposition. The Al2O3 provides excellent surface passivation of p-doped silicon surfaces. The Al2O3 layer is typically the bottom layer with multiple silicon nitride (SixNy) layers for capping.