Concept
Czochralski method
Related publications (73)
Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy
Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...
EPFL2024Photo-doping of spiro-OMeTAD for highly stable and efficient perovskite solar cells
Jacques-Edouard Moser, Kai Zhu, Etienne Christophe Socie, George Cameron Fish, Aaron Tomas Terpstra
A widely used component of high-efficiency perovskite solar cells (PSCs) is the molecular hole-transport material (HTM) spiro-OMeTAD. This organic solid needs to be p-doped to acquire sufficient hole conductivity. However, the conventional doping method us ...
2024Structure, Oxygen Content and Electric Properties of Titanium Nitride Electrodes in TiNx/La:HfO2/TiNx Stacks Grown by PEALD on SiO2/Si
Philippe Buffat, Elena Suvorova Buffat
This work reports experimental results of the quantitative determination of oxygen and band gap measurement in the TiNx electrodes in planar TiNx top/La:HfO2/TiNx bottom MIM stacks obtained by plasma enhanced atomic layer deposition on SiO2. Methodological ...
2022