Concept

Electrical element

Related publications (111)

Gate unit for a gate-commutated thyristor and integrated gate-commutated thyristor

The invention relates to a gate unit (22) for controlling a gate commutated thyristor (21), comprising: - a voltage selector (26) for selectively applying a high supply potential (Vpos), a middle supply potential (Vmid), and a low supply potential (Vneg); ...

2023

A Front-End CMOS Interface Circuit With High Voltage Charge Pump and Oscillator for Capacitive Micromachined Ultrasonic Transducers

Sandro Carrara, Gian Luca Barbruni, Zhengwen Jiang, Yihe Zhao

Label-free biosensors, combined with miniaturized micro-electromechanical sensory platforms, offer an attractive solution for real-time and facile monitoring of biomolecules due to their high sensitivity and selectivity without the need for specifically la ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

New Insights for Parasitic Effects of Label-Free Biosensors Based on Capacitive Micromachined Ultrasonic Transducers

Sandro Carrara, Zhengwen Jiang, Yihe Zhao, Jie Li

Capacitive micromachined ultrasonic transducers (CMUTs) are regarded as an attractive candidate in bio-applications such as imaging and molecule monitoring. However, the previous researches on biochemical sensing are mostly air-coupled application based on ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Anisotropic and nonlinear transport in microstructured 3D topological semimetals

Xiangwei Huang

Topological semimetals are frequently discussed as materials platforms for future electronics that exploit the remarkable properties of their quasiparticles. These ideas are mostly based on dispersion relations that mimic relativistic particles, such as We ...

EPFL2022

NP Satisfiability for Arrays as Powers

Viktor Kuncak, Rodrigo Raya

We show that the satisfiability problem for the quantifier-free theory of product structures with the equicardinality relation is inNP. As an application, we extend the combinatory array logic fragmentto handle cardinality constraints. The resulting fragme ...

Springer, Cham2022

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Mihai Adrian Ionescu, Junrui Zhang, Francesco Bellando, Pierpaolo Palestri, Luca Selmi

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power ...

2021

Multi-scale model for coupled piezoelectric-inelastic behavior

Dragan Damjanovic

In this work, we present the development of a 3D lattice-type model at microscale based upon the Voronoi-cell representation of material microstructure. This model can capture the coupling between mechanic and electric fields with non-linear constitutive b ...

TECHNO-PRESS2021

Hardware-in-the-Loop Characterization of Source-Affected Output Characteristics of Cascaded H-Bridge Converter

Drazen Dujic, Marko Petkovic

Recent trends in power system design such as an increasing share of renewable energy sources and integration of power electronics equipment for medium voltage applications are creating different subsystem interactions that require proper investigation, und ...

2020

Flexure Pivot Oscillator Insensitive to Gravity

Simon Nessim Henein, Etienne Frédéric Gabriel Thalmann, Mohammad Hussein Kahrobaiyan

The mechanical oscillator according to the invention comprises an oscillating body (601), at least one rigid intermediate body (602) and a support (600). Each rigid intermediate body is connected to the support by a pair of elements (610, 611) providing ro ...

2020

Negative capacitance semiconductor sensor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando

The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...

2020

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