Concept

Logic gate

Related publications (435)

Organic Thin-Film Transistors and Circuits Fabricated by Stencil Lithography on Full-Wafer Flexible Substrates

Electronic devices based on organic semiconductors, such as field-effect transistors (OTFTs) and organic diodes have attracted significant interest as possible inexpensive and flexible alternatives to inorganic devices. Despite considerable improvement in ...

EPFL2011

Multi-Objective Airport Gate Assignment Problem

Michel Bierlaire, Prem Kumar

In this paper, we consider the gate assignment for a large airline at its hub airport. It is considered to be a highly complex problem with the possibility of application in both planning as well as operations mode. There are various considerations that ar ...

2011

Self-Assembled Liquid-Gated Zinc Oxide Nanowire Transistors

Vivek Pachauri

This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...

EPFL2011

PN junction rectification in electrolyte gated Mg-doped InN

Esther Alarcon Llado

PN junction rectification is demonstrated in indium nitride. The junction is formed between the n-type surface accumulation layer and the Mg-doped, p-type bulk in a top-contacted thin film structure. The parasitic shorting path between the top contacts is ...

2011

Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Pierpaolo Palestri, Luca Selmi

The Tunnel-FET (TFET) device is a gated reverse biased p-i-n junction whose working principle is based on the quantum mechanical Band-to-Band Tunneling (B2BT) mechanism [1]. The OFF-ON transition can be much more abrupt than for conventional MOSFETs, thus ...

IEEE2011

Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors

Nava Setter, Igor Stolichnov, Sebastian Riester, Evgeny Mikheev

Ferroelectric copolymers of polyvinylidene fluoride and trifluoroethylene are attractive gate materials because of a rather high remanent polarization, low dielectric permittivity, and easy integration on semiconductors due to the low processing temperatur ...

2011

Photoemission-induced gating of topological insulators

Helmuth Berger

The recently discovered topological insulators exhibit topologically protected metallic surface states which are interesting from the fundamental point of view and could be useful for various applications if an appropriate electronic gating can be realized ...

2011

Video-rate fluorescence lifetime imaging camera with CMOS single-photon avalanche diode arrays and high-speed imaging algorithm

Edoardo Charbon, David Li

A high-speed and hardware-only algorithm using a center of mass method has been proposed for singledetector fluorescence lifetime sensing applications. This algorithm is now implemented on a field programmable gate array to provide fast lifetime estimates ...

2011

Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

Klaus Kern, Hagen Klauk, Ralf Thomas Weitz, Frederik Sebastian Ante

A novel approach for the fabrication of transistors and circuits based on individual single-crystalline ZnO nanowires synthesized by a low-temperature hydrothermal method is reported. The gate dielectric of these transistors is a self-assembled monolayer t ...

2011

Circuit Level Modeling Methodology of Parasitic Substrate Current Injection from a High-Voltage H-bridge at High Temperature

Maher Kayal, Jean-Michel Sallese, Fabrizio Lo Conte

In this paper, a modeling methodology is validated based on an enhanced model of the diode, that we have developed to simulate substrate current coupling mechanisms on a typical H -bridge structure. An equivalent schematic based on an enhanced model of the ...

2011

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