Related publications (32)

Simulation of atomistic processes during silicon oxidation

Angelo Bongiorno

Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 ...
EPFL2003

Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells

Nicolas Grandjean

The 2-K recombination dynamics of coupled GaN-AlGaN multiple quantum wells reveals a composite nature in terms of the joint contributions of short-lived direct excitons and long-lived oblique ones. The possibility to observe these oblique excitons, which p ...
1999

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