Nicolas Grandjean

Nicolas Grandjean received a PhD degree in physics from the University ofNice Sophia Antipolis in 1994 and shortly thereafter joined the French National Center for Scientific Research (CNRS) as a permanent staff member. In 2004, he was appointed tenure-track assistant professor at the École polytechnique fédérale de Lausanne (EPFL) where he created the Laboratory for advanced semiconductors for photonics and electronics. He was promoted to full professor in 2009. He was the director of the Institute of Condensed Matter Physics from 2012 to 2016 and then moved to the University of California at Santa Barbara where he spent 6 months as a visiting professor. Since 2018, he is the head of the School of Physics at the EPFL. He was awarded the Sandoz Family Foundation Grant for Academic Promotion, received the “Nakamura Lecturer” Award in 2010, the "Quantum Devices Award” at the 2017 Compound Semiconductor Week, and “2016 best teacher” award from the EPFL Physics School. His research interests are focused on the physics of nanostructures and III-V nitride semiconductor quantum photonics.

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Molecular-beam epitaxy

Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is consid

Photoluminescence

Photoluminescence (abbreviated as PL) is light emission from any form of matter after the absorption of photons (electromagnetic radiation). It is one of many forms of luminescence (light emission) a

Light-emitting diode

A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form o

PHYS-101(e): General physics : mechanics (STI II)

Le but du cours de physique générale est de donner à l'étudiant les notions de base nécessaires à la compréhension des phénomènes physiques. L'objectif est atteint lorsque l'étudiant est capable de prévoir quantitativement les conséquences de ces phénomènes avec des outils théoriques appropriés.

PHYS-434: Physics of photonic semiconductor devices

Series of lectures covering the physics of quantum heterostructures (including quantum dots), microcavities and photonic crystal cavities as well as the properties of the main light emitting devices that are light-emitting diodes (LEDs) and laser diodes (LDs).

PHYS-635: Semiconductor photonics and quantum structures

This course gives an overview of the current trends in semiconductor nanophotonics, with an emphasis on quantum nanostructures and optical cavities. Different light-matter interaction regimes in cavity-quantum structure systems are discussed. Nanophotonic light emitting devices are presented.

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells

Raphaël Butté, Jean-François Carlin, Nicolas Grandjean

Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature. Stimulated polariton relaxation into multiple ring resonator modes is observed, which exhibit threshold-like dependence of the emission intensity with pulse energy. The strong exciton-photon coupling regime is confirmed by the significant reduction of the free spectral range with energy and the blueshift of the exciton-like modes with increasing pulse energy. Importantly, the exciton emission shows no broadening with power, further confirming that lasing is observed at electron-hole densities well below the Mott transition. Overall, our work paves the way toward the development of novel UV devices based on the high-speed slab waveguide polariton geometry operating up to room temperature with the potential to be integrated into complex photonic circuits.

AIP Publishing2023

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Jean-François Carlin, Nicolas Grandjean, Camille Haller

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. In this paper we analyze the impact of the defects on the electrical characteristics of LEDs: we analyze three single-quantum-well (SQW) InGaN/GaN LED wafers, which differ in the density of defects. Through steady-state photocapacitance (SSPC) and light-capacitance-voltage measurements, the energy levels of these deep defects and their concentrations have been estimated. By means of a simulation campaign, we show that these defects have a fundamental impact on the current voltage characteristic of LEDs, especially in the sub turn-on region. The model adopted takes into consideration trap assisted tunneling as the main mechanism responsible for current leakage in forward bias. For the first time, we use in simulations the defect parameters (concentration, energy) extracted from SSPC. In this way, we can reproduce with great accuracy the current-voltage characteristics of InGaN LEDs in a wide current range (from pA to mA). In addition, based on SSPC measurements, we demonstrate that the defect density in the active region scales with the QW thickness. This supports the hypothesis that defects are incorporated in In-containing layers, consistently with recent publications.

SPIE-INT SOC OPTICAL ENGINEERING2022

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Jean-François Carlin, Nicolas Grandjean, Camille Haller, Mauro Mosca

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.

SPIE-INT SOC OPTICAL ENGINEERING2022