Concept

Single-event upset

Related publications (32)

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Development of a Data Concentrator ASIC for the High Luminosity upgrade of the CMS Outer Tracker detector with tracking trigger

Simone Scarfì

With the increasing capabilities of the microelectronics technology, future particle detectors in high energy physics will be able to yield high-level features that are not only simple geometrical positions or energy measurement in the silicon sensors used ...

EPFL2021

Engineering Breakdown Probability Profile for PDP and DCR Optimization in a SPAD Fabricated in a Standard 55nm BCD Process

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Myung Jae Lee

CMOS Single-Photon Avalanche Diodes (SPADs) have broken into the mainstream by enabling the adoption of imaging, timing, and security technologies in a variety of applications within the consumer, medical and industrial domains. The continued scaling of te ...

2021

Prediction of optically-triggered amplification in phototransistor with SPICE circuit simulators

Jean-Michel Sallese, Chiara Rossi

Modeling of optoelectronic devices involves long and complex numerical simulations, usually performed with TCAD tools. Numerical simulations provide accurate results for a single device but are not feasible when dealing with a full circuit comprising sever ...

SPIE-INT SOC OPTICAL ENGINEERING2020

Impact of Memory Voltage Scaling on Accuracy and Resilience of Deep Learning Based Edge Devices

David Atienza Alonso, Andreas Peter Burg, Miguel Peon Quiros, Andrea Bonetti, Martino Ruggiero, Benoît Walter Denkinger, Flavio Ponzina, Soumya Subhra Basu, Szabolcs Balási

Energy consumption is a significant obstacle to integrate deep learning into edge devices. Two common techniques to curve it are quantization, which reduces the size of the memories (static energy) and the number of accesses (dynamic energy), and voltage s ...

2019

Strengthened Information-theoretic Bounds on the Generalization Error

Michael Christoph Gastpar, Amedeo Roberto Esposito, Ibrahim Issa

The following problem is considered: given a joint distribution P XY and an event E, bound P XY (E) in terms of P X P Y (E) (where P X P Y is the product of the marginals of P XY ) and a measure of dependence of X and Y. Such bounds have direct application ...

IEEE2019

Research and development of an intelligent particle tracker detector electronic system

Alessandro Caratelli

In high energy physics, silicon particles detectors are widely used in tracking applications. They feature high-resolution measurements of the traversing particle positioning and frequently its energy. With the new possibilities introduced by technology sc ...

EPFL2019

1GigaRad TID impact on 28 nm HEP analog circuits

Christian Enz

An in-depth analysis of modern technologies could represent the base for the success of the High Luminosity Large Hadron Collider experiments. The requirement is a new reliable electronics in 1Grad-TID environments. For the purpose, single devices in TSMC ...

ELSEVIER SCIENCE BV2018

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.