Concept

Single-event upset

Related publications (32)

Hardening acceleration/hardening retardation composition for building materials

Provided herein is a composition for use as a hardening regulator, e.g. hardening accelerator or hardening retarder, for building materials, as well as methods for producing thereof. The composition is characterized by a biphasic nature in which solid calc ...

2018

Development and Characterisation of Silicon Photomultiplier Multichannel Arrays for the Readout of a Large Scale Scintillating Fibre Tracker

Axel Kuonen

The current LHCb detector will continue collecting data until the long shutdown 2 (2019/2020). It will be upgraded in order to operate at higher luminosity. To achieve this, two major changes are required. First the Level-0 hardware trigger limited to 1,M ...

EPFL2018

Operation regimes and electrical transport of steep slope Schottky Si-FinFETS

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang

In the quest for energy efficient circuits, considerable focus has been given to steep slope and polarity-controllable devices, targeting low supply voltages and reduction of transistor count. The recently proposed concept of the three-independent gated Si ...

2017

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Jian Zhang

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

Trapped-Electron Runaway Effect

Joan Decker

In a tokamak, trapped electrons subject to a strong electric field cannot run away immediately, because their parallel velocity does not increase over a bounce period. However, they do pinch toward the tokamak center. As they pinch toward the center, the t ...

Cambridge University Press2015

Polarity Control at Runtime

Michele De Marchi

Semiconductor device research for digital circuit design is currently facing increasing challenges to enhance miniaturization and performance. A huge economic push and the interest in novel applications are stimulating the development of new pathways to ov ...

EPFL2015

Mass distributions marginalized over per-event errors

Frédéric Guillaume Dupertuis

We present generalizations of the Crystal Ball function to describe mass peaks in which the per event mass resolution is unknown and marginalized over. The presented probability density functions are tested using a series of toy Monte Carlo samples generat ...

Elsevier Science Bv2014

TSPC Flip-Flop Circuit Design with Three-Independent-Gate Silicon Nanowire FETs

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Jian Zhang

True Single-Phase Clock (TSPC) Flip-Flops, based on dynamic logic implementation, are area-saving and high-speed compared to standard static flip-flops. Furthermore, logic gates can be embedded into TSPC flip-flops which significantly improves performance. ...

IEEE2014

Proton-Radiation Tolerance of Silicon and SU-8 as Structural Materials for High-Reliability MEMS

Herbert Shea, Antonia Neels, Alex Dommann, Tobias Bandi

The susceptibility of single-crystal silicon and SU-8 resonators to proton-radiation induced degradation was investigated. Both materials are in widespread use for microsystems structures, thus the stability of the mechanical properties must be ensured ove ...

Institute of Electrical and Electronics Engineers2013

Making MEMS more suited for Space: Assessing the proton-radiation tolerance of structural materials for microsystems in orbit

Herbert Shea, Antonia Neels, Alex Dommann, Tobias Bandi

We report on the susceptibility of structural MEMS materials to proton radiation damage. Radiation tests at spacerelevant doses were conducted on MEMS resonators. The two materials examined were single crystal silicon and SU-8, which are both in widespread ...

2013

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